N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4501AGM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Sim...
Description
Advanced Power Electronics Corp.
AP4501AGM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance
D2 D2 D1 D1
▼ RoHS Compliant
SO-8
G2 S2 G1 S1
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2 S1
30V 28mΩ
7A -30V 50mΩ -5.3A
D2
S2
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
+20 +20 7.0 -5.3 5.8 -4.7 20 -20
V A A A
PD@TA=25℃
Total Power Dissipation Linear Derating Factor
2 0.016
W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201410175AP
AP4501AGM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDS...
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