Document
Advanced Power Electronics Corp.
AP4503BGO-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
G2 S2 S2 D2
TSSOP-8
G1 S1 S1
D1
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
30V 23mΩ 6.3A -30V 35mΩ -5.2A
D2
G1 G2 S1
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +20 6.3 -5.2 5.0 -4.2 20 -20
1.38 -55 to 150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 90
Unit ℃/W
1 201501292
AP4503BGO-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V ID=6A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V
.VDS=15V
f=1.0MHz f=1.0MHz
30 - - V
- - 23 mΩ
- - 40 mΩ
1 - 3V
- 14 -
S
- - 1 uA
- - +100 nA
- 7 11 nC - 2 - nC - 4 - nC - 6 - ns - 6 - ns - 17 - ns - 4 - ns - 550 880 pF
- 105 - pF
- 90 - pF
- 1.7 -
Ω
Source-Drain Diode
Symbol VSD
Parameter Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 15 - ns - 7 - nC
2
AP4503BGO-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A
-30 ---
-V 35 mΩ 50 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
IGSS Gate-Source Leakage
VGS=+20V, VDS=0V
Qg Total Gate Charge
ID=-5A
Qgs Gate-Source Charge
VDS=-15V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-15V
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf Fall Time
VGS=-10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-15V
.Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
- 18 -
S
- - -1 uA
- - +100 nA
- 14.4 23 nC
- 5.5 - nC
- 5 - nC
- 7 - ns
- 6.5 - ns
- 36 - ns
- 28 - ns
- 960 1530 pF
- 190 - pF
- 170 - pF
- 6 -Ω
Source-Drain Diode
Symbol VSD
Parameter Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions IS=-1.2A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units - - -1.2 V - 19 - ns - 9 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
3
AP4503BGO-HF
N-Channel
30
T A =25 ℃
20
10V 7.0V 6.0V 5.0V V G =4.0V
10
20 10
T A =150 ℃
10V 7.0V 6.0V 5.0V V G =4.0V
ID , Drain Current (A)
ID , Drain Current (A)
RDS(ON0 (mΩ)
0 012345678
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0 012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
35
I D = 4A T A = 25 o C
30
25
1.8
I D =6A V G =10
1.4
Normalized RDS(ON)
20
.
15
10 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
T j =150 o C
4
T j =25 o C
3
2
1
0 0 0.2 0.4 0.6 0.8 1 1.2
V SD , Sourc.