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AP4503BGO-HF Dataheets PDF



Part Number AP4503BGO-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4503BGO-HF DatasheetAP4503BGO-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP4503BGO-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 23.

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Advanced Power Electronics Corp. AP4503BGO-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 23mΩ 6.3A -30V 35mΩ -5.2A D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 6.3 -5.2 5.0 -4.2 20 -20 1.38 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201501292 AP4503BGO-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=6A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V .VDS=15V f=1.0MHz f=1.0MHz 30 - - V - - 23 mΩ - - 40 mΩ 1 - 3V - 14 - S - - 1 uA - - +100 nA - 7 11 nC - 2 - nC - 4 - nC - 6 - ns - 6 - ns - 17 - ns - 4 - ns - 550 880 pF - 105 - pF - 90 - pF - 1.7 - Ω Source-Drain Diode Symbol VSD Parameter Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 15 - ns - 7 - nC 2 AP4503BGO-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A -30 --- -V 35 mΩ 50 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V IGSS Gate-Source Leakage VGS=+20V, VDS=0V Qg Total Gate Charge ID=-5A Qgs Gate-Source Charge VDS=-15V Qgd Gate-Drain ("Miller") Charge VGS=-4.5V td(on) Turn-on Delay Time VDS=-15V tr Rise Time ID=-1A td(off) Turn-off Delay Time RG=3.3Ω tf Fall Time VGS=-10V Ciss Input Capacitance VGS=0V Coss Output Capacitance VDS=-15V .Crss Reverse Transfer Capacitance f=1.0MHz Rg Gate Resistance f=1.0MHz - 18 - S - - -1 uA - - +100 nA - 14.4 23 nC - 5.5 - nC - 5 - nC - 7 - ns - 6.5 - ns - 36 - ns - 28 - ns - 960 1530 pF - 190 - pF - 170 - pF - 6 -Ω Source-Drain Diode Symbol VSD Parameter Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=-1.2A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - -1.2 V - 19 - ns - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4503BGO-HF N-Channel 30 T A =25 ℃ 20 10V 7.0V 6.0V 5.0V V G =4.0V 10 20 10 T A =150 ℃ 10V 7.0V 6.0V 5.0V V G =4.0V ID , Drain Current (A) ID , Drain Current (A) RDS(ON0 (mΩ) 0 012345678 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0 012345 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 35 I D = 4A T A = 25 o C 30 25 1.8 I D =6A V G =10 1.4 Normalized RDS(ON) 20 . 15 10 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 7 6 5 T j =150 o C 4 T j =25 o C 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Sourc.


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