Document
Advanced Power Electronics Corp.
AP4511GED-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
D2
D2 D1 D1
PDIP-8
G2 S2 G1 S1
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G1 G2
40V 28mΩ
6A -40V 42mΩ -5A
D2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
.
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Rating N-channel P-channel
40 -40 +16 +16 6.0 -5.0 5.0 -4.0 30 -30
2.0 0.016 -55 to 150 -55 to 150
Units
V V A A A W W/℃ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 200906014
AP4511GED-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V
Gate-Source Leakage Total Gate Charge2
VGS=+16V, VDS=0V ID=6A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge Turn-on Delay Time2
VGS=4.5V VDS=20V
Rise Time
ID=6A
Turn-off Delay Time Fall Time
RG=3Ω,VGS=10V
.RD=3.3Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=20V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
40 -
-V
- 0.03 - V/℃
- - 28 mΩ
- - 36 mΩ
1 - 3V
-6-S
- - 1 uA - - 25 uA - - +30 uA - 8.2 13 nC - 1.5 - nC - 3.6 - nC - 7 - ns - 20 - ns - 20 - ns - 4 - ns - 590 940 pF - 110 - pF - 80 - pF - 23Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2 trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions IS=1.25A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs
Min. Typ. Max. Units - - 1.6 V - 20 - ns - 12 - nC
2
AP4511GED-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
-40 - -0.03 --
42
VGS=-4.5V, ID=-3A
- - 60
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8 - -2.5
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V
IGSS Gate-Source Leakage
VGS=+16V, VDS=0V
Qg Total Gate Charge2
ID=-5A
Qgs Gate-Source Charge
VDS=-20V
-5- - -1 - - -25 - - +30 - 9 24 -2-
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-20V
-5- 8.5 -
tr Rise Time
td(off)
Turn-off Delay Time
ID=-5A RG=3Ω,VGS=-10V
- 15 - 27 -
tf Fall Time Ciss Input Capacitance
RD=4Ω
.VGS=0V
- 25 - 770 1230
Coss Output Capacitance
VDS=-20V
- 165 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 115 -
Rg Gate Resistance
f=1.0MHz
- 69
Units V
V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2 trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions IS=-1.25A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/µs
Min. Typ. Max. Units - - -1.6 V - 20 - ns - 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
3
AP4511GED-HF
N-Channel
30
T A = 25 o C
20
10
10V 7.0V 5.0V 4.5V
V G =3.0V
30
T A = 150 o C
20
10
10V 7.0V 5.0V 4.5V
V G =3.0V
ID , Drain Current (A)
ID , Drain Current (A)
0 0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0 01234
V DS , Drain-to-Source Voltage .