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AP4511GED-HF Dataheets PDF



Part Number AP4511GED-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4511GED-HF DatasheetAP4511GED-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP4511GED-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 40V 28.

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Advanced Power Electronics Corp. AP4511GED-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 40V 28mΩ 6A -40V 42mΩ -5A D2 S1 S2 Absolute Maximum Ratings Symbol Parameter . VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 40 -40 +16 +16 6.0 -5.0 5.0 -4.0 30 -30 2.0 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 200906014 AP4511GED-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS=+16V, VDS=0V ID=6A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS=4.5V VDS=20V Rise Time ID=6A Turn-off Delay Time Fall Time RG=3Ω,VGS=10V .RD=3.3Ω Input Capacitance VGS=0V Output Capacitance VDS=20V Reverse Transfer Capacitance f=1.0MHz Gate Resistance f=1.0MHz Min. Typ. Max. Units 40 - -V - 0.03 - V/℃ - - 28 mΩ - - 36 mΩ 1 - 3V -6-S - - 1 uA - - 25 uA - - +30 uA - 8.2 13 nC - 1.5 - nC - 3.6 - nC - 7 - ns - 20 - ns - 20 - ns - 4 - ns - 590 940 pF - 110 - pF - 80 - pF - 23Ω Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time2 Qrr Reverse Recovery Charge Test Conditions IS=1.25A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs Min. Typ. Max. Units - - 1.6 V - 20 - ns - 12 - nC 2 AP4511GED-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. BVDSS ΔBVDSS/ΔTj RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A -40 - -0.03 -- 42 VGS=-4.5V, ID=-3A - - 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 gfs Forward Transconductance VDS=-10V, ID=-5A IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V IGSS Gate-Source Leakage VGS=+16V, VDS=0V Qg Total Gate Charge2 ID=-5A Qgs Gate-Source Charge VDS=-20V -5- - -1 - - -25 - - +30 - 9 24 -2- Qgd Gate-Drain ("Miller") Charge VGS=-4.5V td(on) Turn-on Delay Time2 VDS=-20V -5- 8.5 - tr Rise Time td(off) Turn-off Delay Time ID=-5A RG=3Ω,VGS=-10V - 15 - 27 - tf Fall Time Ciss Input Capacitance RD=4Ω .VGS=0V - 25 - 770 1230 Coss Output Capacitance VDS=-20V - 165 - Crss Reverse Transfer Capacitance f=1.0MHz - 115 - Rg Gate Resistance f=1.0MHz - 69 Units V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time2 Qrr Reverse Recovery Charge Test Conditions IS=-1.25A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/µs Min. Typ. Max. Units - - -1.6 V - 20 - ns - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 90℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4511GED-HF N-Channel 30 T A = 25 o C 20 10 10V 7.0V 5.0V 4.5V V G =3.0V 30 T A = 150 o C 20 10 10V 7.0V 5.0V 4.5V V G =3.0V ID , Drain Current (A) ID , Drain Current (A) 0 0123 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0 01234 V DS , Drain-to-Source Voltage .


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