DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP6920GMT-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simp...
Description
Advanced Power Electronics Corp.
AP6920GMT-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Easy for Synchronous Buck
Converter Application ▼ RoHS Compliant & Halogen-Free
G1
Description
G2
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters.
D1 CH-1 BVDSS
RDS(ON)
D2/S1
ID
CH-2 BVDSS
RDS(ON)
IS2 D
G2 S2 S2 S2
S1/D2
30V 8.5mΩ
48A 30V 3.8mΩ 87A
G2 S2 S2 S2
D1
G1 D1 D1 D1
G1
D1 D1
D1
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
CH-1
CH-2
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip Limited) , VGS @ 10V Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1
30 +20 48 15 12 40
30 +12 87 25.7 20.5 60
V V A A A A
PD@TA=25℃ TSTG TJ
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
3.13 3.9 -55 to 150 -55 to 150
W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Rating
CH-1
CH-2
4 2.8
40 32
70 60
Units
℃/W ℃/W ℃/W
1 201...
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