AP6942GMT-HF

Advanced Power Electronics Corp. AP6942GMT-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free N-CH P-CH Description S1 G1 S2 G2 AP6942 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 9mΩ 15.8A -20V 23mΩ -10.1A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion S1 application using standard infrared reflow technique with the G1 backside heat sink to achieve the good thermal performance. S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -20 V VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 +20 15.8 12.6 60 +12 -10.1 -8.1 40 V A A A PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 3.57 -55 to 150 -55 to 150 W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Rating N-channel P-channel 7.2 6 35 35 Data and specifications subject to change ...