FPD6836

0.25W POWER PHEMT FPD6836 Datasheet v3.0 FEATURES: 25.5 dBm Output Power (P1dB) 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION: The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. ELECTRICAL SPECIFICATIONS1: LAYOUT: TYPICAL APPLICATIONS: Narrowband and broadband highperformance amplifiers SATCOM uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters PARAMETER Power at 1dB Gain Compression Power Gain at P1dB SYMBOL P1dB G1dB CONDITIONS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS MIN TYP MAX 24.5 25.5 9.0 10.0 UNITS dBm dB Power-Added Efficiency Maximum Stable Gain (S21/S12) f = 12 GHz f = 24 GHz Saturated Drain-Source Current Maximum Drain-Source Current PAE MSG IDSS IMAX VDS = 8 V; IDS = 50% IDSS POUT = P1dB 50 VDS = 8 V; IDS = 50% IDSS VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V 15.5 11.0 90 16.5 12.0 110 215 135 % dB mA mA Transconductance GM VDS = 1.3 V; VGS = 0 V Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage |VP| V...