H01N60

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features 1A, 600V, RDS(on)=8Ω@VGS=10V Low Gate Charge 15nC(Typ.) Low Crss 4pF(Typ.) Fast Switching Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed) *1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Total Power Dissipation (TA=25oC) PD Total Power Dissipation (TC=25oC) Derate above 25°C Tj, Tstg TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from c...