A1162 Datasheet (data sheet) PDF - Toshiba Semiconductor Semiconductor

A1162 Datasheet - 2SA1162

A1162   A1162  

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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 A udio Frequency General Purpose Amplifie r Applications • High voltage and hig h current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: h FE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~40 0 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2712 • Small pac

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Programmable Precision Hall-Effect Switch

Toshiba Semiconductor



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