BYV56M

BYV56 Series Fast Silicon Mesa Rectifiers Features — Glass passivated junction — Hermetically sealed package — Low reverse current — Soft recovery characteristics Applications Very fast rectifiers and switches Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage =Repetitive peak reverse voltage Test Conditions Peak forward surge current Average forward current Junction and storage temperature range tp=10ms, half sinewave on PC board l=10mm, TL=25°C Type BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM Value 50 100 200 400 600 800 1000 80 IFAV IFAV Tj=Tstg 1.5 3 –65...+175 Unit V V V V V V V A A A °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient l=10mm, TL=constant on PC board with spacing 37.5mm Electrical Characteristics Tj = 25_C Parameter Test Conditions Forward voltage Reverse current Reverse recovery time IF=3A VR=VRRM VR=VRRM, Tj=150°C IF=0.5A, IR=1A, iR=0.25A Type Symbol RthJA RthJA Value 25 70 Unit K/W K/W Symbol Min Typ Max Unit VF 1.4 V IR 5 mA IR 150 mA trr 100 ns BYV56 Series Fast Silicon Mesa Rectifiers IR – Reverse Current ( mA ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 40 1000 Scattering Limit 30 100 20 l l 10 TL=constant 0 0 5 10 15 20 25 30 94 9462 l – Lead Length ( mm ) Figure 1. Max. Thermal Resistance vs. Lead Length I FAV– Average Forward Curre...