Silicon Mesa Rectifiers
Silicon Mesa Rectifiers
BYW52...BYW56
Features
D Controlled avalanche characteristics D Glass passivated junction D He...
Description
Silicon Mesa Rectifiers
BYW52...BYW56
Features
D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes:
BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage, repetitive peak reverse voltage
Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power
Max. pulse energy in the avalanche mode, non repetitive (inductive load switch off) i2* t–rating Junction temperature Storage temperature range
tp=10ms
ϕ=180° tp=20ms half sinus wave, Tj=175°C I(BR)R=1A, Tj=175°C
Type BYW52 BYW53 BYW54 BYW55 BYW56
Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM
IFSM IFRM IFAV PR
ER
Value 200 400 600 800 1000 50 12 2 1000
20
Unit V V V V V A A A W
mWs
i2*t 8 A2*s Tj 175 °C Tstg –55...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction ambient
Test Conditions l=10mm, TL=constant on PC board with spacing 25mm
Symbol RthJA RthJA
Value 45 100
Unit K/W K/W
TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94
1 (5)
BYW52...BYW56
Characteristics
Tj = 25_C Parameter
Forward voltage Reverse current
Breakdown voltage Diode capacitance Reverse recovery time
Reverse recovery charge
Test Conditions
IF=1A
VR=VRRM
VR=VRRM, Tj=100°C IR=100mA, tp/T=0.01, tp=0.3ms
VR=0, f=0.47MHz
IF=0.5A...
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