KDB3652

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3652 (FDB3652) Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature Symbol VDSS VGSS ID PD RèJA RèJC Tch Tstg Rating 100 20 61 9 150 1.0 43 1.0 175 -55 to +175 Unit V V A A W W/ /W /W www.kexin.com.cn 1 SMD Type KDB3652 (FDB3652) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current Gate threshold voltage IGSS VGS(th) Drain to source on-state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Re...