KDB5690

SMD Type TransistIoCrs N-Channel PowerTrenchTMMOSFET KDB5690 Features 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 maximum junction temperature rating. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 5 11Ggaattee 22Ddrraaiinn 33Ssoouurrccee Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Symbol VDSS VGS ID PD PD TJ, TSTG R JC R JA Rating 60 20 32 100 58 0.4 -65 to 175 2.6 62.5 Unit V V A A W W/ /W /W www.kexin.com.cn 1 SMD Type TransistIoCrs KDB5690 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy * Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Symbol WDSS IAR BVDSS Testconditons VDD = 30 V, ID = 32A VGS = 0 V, ID = 250 A Min Typ Max Unit 80 mJ 32 A 60 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenc...