Document
SMD Type
TransistIoCrs
N-Channel Logic Level Enhancement
Mode Field Effect Transistor KDB6030L
Features
52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V
Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed.
+5 .2 8 0.2 -0.2
+8 .7 0.2 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1
Unit: mm
+1 .2 7 0.1 -0.1
5.60
+ 0 .2 -0.2
1.27+0.1 -0.1
0.1max
2.54 5.08+0.2 -0.2 +0.1 -0.1
0.81+0.1 -0.1
2.54
+2 .5 4 0.2 -0.2
0.4+0.2 -0.2
1
5
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2
5
11Ggaattee 22Ddrraaiinn 33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25
Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Symbol VDSS VGS
ID
PD PD TJ, TSTG R JC R JA
Rating 30 20 52 156 75 0.5
-65 to 175 2
62.5
Unit V V A A W
W/
/W /W
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SMD Type
TransistIoCrs
KDB6030L
Electrical Characteristics Ta = 25
Parameter Single Pulse Drain-Source Avalanche Energy * Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
Symbol WDSS
IAR BVDSS
IDSS IGSSF IGSSR VGS(th)
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain–Source Diode Forward Current * Drain-Source Diode Forward Voltage Drain-Source Diode Forward Voltage
* Pulse Test: Pulse Width 300 s, Duty Cycle
ID(on) ID(on) gFS Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
IS
VSD VSD 2.0%
Testconditons VDD = 15 V, ID = 21A
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 VGS = 10 V, ID = 26 A VGS = 10 V, ID = 26 A,TJ = 125 VGS = 4.5 V, ID =21 A, VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 26 A
VDS = 15 V, VGS = 0 V,f = 1.0 MHz
VDD = 15 V, ID = 52 A,VGS = 10 V, RGEN = 24 *
VDS = 12 V, ID = 26A,VGS = 10 V *
VGS = 0 V, IS = 26 A * VGS = 0 V, IS = 26 A *TJ=125
Min Typ Max Unit 150 mJ 21 A
30 V
37 mV/
10 A
100 nA
-100 nA
1 1.6
3
V
-4 mV/
0.0095 0.0135
0.014 0.023 m
0.015 0.02
60 A
15
37 S
1230
pF
640 pF
175 pF
7.6 15 ns
150 210 ns
29 46 ns
17 27 ns
34 46 nC
6 nC
8 nC
52 A
0.91 1.3 0.8 1.2
V V
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