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KDB6030L Dataheets PDF



Part Number KDB6030L
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet KDB6030L DatasheetKDB6030L Datasheet (PDF)

SMD Type TransistIoCrs N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L Features 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 5 11.

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SMD Type TransistIoCrs N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L Features 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 5 11Ggaattee 22Ddrraaiinn 33Ssoouurrccee Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Symbol VDSS VGS ID PD PD TJ, TSTG R JC R JA Rating 30 20 52 156 75 0.5 -65 to 175 2 62.5 Unit V V A A W W/ /W /W www.kexin.com.cn 1 SMD Type TransistIoCrs KDB6030L Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy * Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Symbol WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Static Drain-Source On-Resistance RDS(on) On-State Drain Current On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain–Source Diode Forward Current * Drain-Source Diode Forward Voltage Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width 300 s, Duty Cycle ID(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VSD 2.0% Testconditons VDD = 15 V, ID = 21A VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 VGS = 10 V, ID = 26 A VGS = 10 V, ID = 26 A,TJ = 125 VGS = 4.5 V, ID =21 A, VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 26 A VDS = 15 V, VGS = 0 V,f = 1.0 MHz VDD = 15 V, ID = 52 A,VGS = 10 V, RGEN = 24 * VDS = 12 V, ID = 26A,VGS = 10 V * VGS = 0 V, IS = 26 A * VGS = 0 V, IS = 26 A *TJ=125 Min Typ Max Unit 150 mJ 21 A 30 V 37 mV/ 10 A 100 nA -100 nA 1 1.6 3 V -4 mV/ 0.0095 0.0135 0.014 0.023 m 0.015 0.02 60 A 15 37 S 1230 pF 640 pF 175 pF 7.6 15 ns 150 210 ns 29 46 ns 17 27 ns 34 46 nC 6 nC 8 nC 52 A 0.91 1.3 0.8 1.2 V V 2 www.kexin.com.cn .


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