FDB42AN15A0_F085

FDB42AN15A0_F085 N-Channel Power Trench® MOSFET FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ Features „ Typ rDS(on) = 30mΩ at VGS = 10V, ID = 12A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems D GS TO-263 FDB SERIES G June 2013 D S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 150 ±20 35 See Figure4 78 150 1.0 -55 to + 175 1.0 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device Package FDB42AN15A0 FDB42AN15A0_F085 D2-PAK(TO-263) Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 32pm:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm2cmpotiiuonHnns,t-.iItnAoRgS-cθo=aJnsC2ea8isAa1ng, iduVna2DcraDpasan=edte-1toeo0fd-0a2Vbmoyzdbducieeroinsnptiggptnehinrew.drmhuicaletlorRrecθshJisAatrias...