N-Channel MOSFET
Main Product Characteristics:
VDSS RDS(on)
75V 6mΩ (typ.)
ID 100A
TO-220
Features and Benefits:
Advanced MOSFET ...
Description
Main Product Characteristics:
VDSS RDS(on)
75V 6mΩ (typ.)
ID 100A
TO-220
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF7508
Marking and pin Schematic diagram Assignment
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH ② Avalanche Current @ L=0.3mH ②
Operating Junction and Storage Temperature Range
Max. 100 70 400 200 1.3 75 ± 20 205 37 -55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.03.19 www.silikron.com
Version : 2.3
page 1 of 8
SSF7508
Thermal Resistance
Symbol RθJC
RθJA
Characterizes
Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.75 62 40
...
Similar Datasheet