PXT8050

PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES z Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE(1) hFE(2) VCE=1V, IC=100mA VCE=1V, IC=800mA 85 400 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1V Base-emitter positive favor voltage VBEF IB=1A 1.55 V Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF CLASSIFICATION OF hFE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 JinYu semiconductor www.htsemi.com PXT8 050 JinY...