KDB4020P

SMD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance, Junction-to- Case Thermal Resistance Junction to Ambient Channel temperature Storage temperature Symbol VDSS VGSS ID Idp PD RèJC RèJA Tch Tstg Rating -20 8 -16 -48 37.5 0.25 4 40 175 -55 to +175 Unit V V A A W W/ /W /W www.kexin.com.cn 1 SMD Type KDB4020P(FDB4020P) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Drain to source on-state resistance On-State Drain Current Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on delay time Rise time Turn-off delay time Fall time Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source ...