CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance
Product Summary V DS @ T j,max R DS(on),max ID
SPW35N60C3
650 V 0.1 Ω 34.6 A
PG-TO247
Type SPW35N60C3
Package PG-TO247
Ordering Code Q67040-S4673
Marking 35N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2) AR
Avalanche
current,
repetitive
t
1) AR
Symbol Conditions I D T C=25 °C
T C=100 °C I D,pulse T C=25 °C E AS I D=17.3 A, V DD=50 V E AR I D=34.6 A, V DD=50 V I AR
Drain source voltage slope
dv /dt
I D=34.6 A, V DS=480 V, T j=125 °C
Value 34.6 21.9 103.8 1500 1.5 34.6
50
Unit A
mJ A V/ns
Gate source voltage
Power dissipation Operating and storage temperature Reverse diode dv/dt 6)
V GS static V GS AC (f >1 Hz) P tot T C=25 °C T j, T stg dv/dt
±20 ±30 313 -55 ... 150 15
V
W °C V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient
R thJA
leaded
Soldering temperature, wavesoldering Tsold
1.6 mm (0.063 in.) from case for 10 s
SPW35N60C3
min.
Values typ.
Unit max.
- - 0.4 K/W - - 62 - - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS=0 V, I D=34.6 A
600 -
700
-V -
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.9 mA
2.1
3
3.9
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
I DSS
V DS=600 V, V GS=0 V, T j=25 °C
V DS=600 V, V GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=21.9 A, T j=25 °C
V GS=10 V, I D=21.9 A, T j=150 °C
R G f =1 MHz, open drain
g fs
|V DS|>2|I D|R DS(on)max, I D=21.9 A
-
-
-
0.1 1 µA
- 100 - 100 nA 0.081 0.1 Ω
0.2 0.6 36 - S
Rev. 2.5
Page 2
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
Parameter
Symbol Conditions
SPW35N60C3
min.
Values typ.
Unit max.
Dynamic characteristics
Input capacitance Output capacitance Reverse transfer capacitance
C iss C oss C rss
Effective output capacitance, energy related3)
C o(er)
Effective output capacitance, time related4)
Turn-on delay time Rise time Turn-off delay time Fall time
C o(tr)
t d(on) tr t d(off) tf
V GS=0 V, V DS=25 V, f =1 MHz
V GS=0 V, V DS=0 V to 480 V
V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω
-
-
-
-
4500 1500 100
180
324
10 5 70 10
- pF -
-
-
- ns -
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Q gs Q gd Qg V plateau
V DD=480 V, I D=34.6 A, V GS=0 to 10 V
- 18 - nC - 70 - 150 200 - 5.3 - V
1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 6) ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak