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35N60C3 Dataheets PDF



Part Number 35N60C3
Manufacturers Infineon
Logo Infineon
Description SPW35N60C3
Datasheet 35N60C3 Datasheet35N60C3 Datasheet (PDF)

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1 Ω 34.6 A PG-TO247 Type SPW35N60C3 Package PG-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain curre.

  35N60C3   35N60C3


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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1 Ω 34.6 A PG-TO247 Type SPW35N60C3 Package PG-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t 1),2) AR Avalanche current, repetitive t 1) AR Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=17.3 A, V DD=50 V E AR I D=34.6 A, V DD=50 V I AR Drain source voltage slope dv /dt I D=34.6 A, V DS=480 V, T j=125 °C Value 34.6 21.9 103.8 1500 1.5 34.6 50 Unit A mJ A V/ns Gate source voltage Power dissipation Operating and storage temperature Reverse diode dv/dt 6) V GS static V GS AC (f >1 Hz) P tot T C=25 °C T j, T stg dv/dt ±20 ±30 313 -55 ... 150 15 V W °C V/ns Rev. 2.5 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wavesoldering Tsold 1.6 mm (0.063 in.) from case for 10 s SPW35N60C3 min. Values typ. Unit max. - - 0.4 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS=0 V, I D=34.6 A 600 - 700 -V - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 2.1 3 3.9 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I DSS V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=21.9 A, T j=25 °C V GS=10 V, I D=21.9 A, T j=150 °C R G f =1 MHz, open drain g fs |V DS|>2|I D|R DS(on)max, I D=21.9 A - - - 0.1 1 µA - 100 - 100 nA 0.081 0.1 Ω 0.2 0.6 36 - S Rev. 2.5 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Parameter Symbol Conditions SPW35N60C3 min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss Effective output capacitance, energy related3) C o(er) Effective output capacitance, time related4) Turn-on delay time Rise time Turn-off delay time Fall time C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω - - - - 4500 1500 100 180 324 10 5 70 10 - pF - - - - ns - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=480 V, I D=34.6 A, V GS=0 to 10 V - 18 - nC - 70 - 150 200 - 5.3 - V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 6) ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak


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