AON6788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6788 uses advanced trench techno...
AON6788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6788 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
30V 80A < 4mΩ < 4.9mΩ
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
D
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±12 80 62 200 17 14 40 80 78 31 2 1.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 1.2
Max 30 64 1.6
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev2 : July 2011
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AON6788
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min...