N-Channel MOSFET. AON6788 Datasheet

AON6788 MOSFET. Datasheet pdf. Equivalent

AON6788 Datasheet
Recommendation AON6788 Datasheet
Part AON6788
Description N-Channel MOSFET
Feature AON6788; AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6788 uses ad.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON6788 Datasheet




Alpha & Omega Semiconductors AON6788
AON6788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6788 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
80A
< 4m
< 4.9m
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
80
62
200
17
14
40
80
78
31
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
1.2
Max
30
64
1.6
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev2 : July 2011
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Page 1 of 7



Alpha & Omega Semiconductors AON6788
AON6788
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=125°C
TJ=125°C
30
1.2
200
0.5
100
100
1.5 2
3.2 4
4.7 5.8
3.6 4.9
115
0.4
80
V
mA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3500
340
160
0.3
4380
490
280
0.7
5250
640
400
1.0
pF
pF
pF
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
24 31 38 nC
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
8 11 13 nC
Qgd Gate Drain Charge
5 9 13 nC
tD(on)
Turn-On DelayTime
10 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
6
ns
tD(off)
Turn-Off DelayTime
RGEN=3
50 ns
tf Turn-Off Fall Time
7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17 22 27 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2 : July 2011
www.aosmd.com
Page 2 of 7



Alpha & Omega Semiconductors AON6788
AON6788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
120
90
4.5V
7V
100
3V
80
60
60 40
VDS=5V
125°C
30
0
0
VGS=2.5V
1234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
5
4 VGS=4.5V
3
VGS=10V
2
1
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
20
25°C
0
1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
1.8
VGS=4.5V
1.6 ID=20A
17
1.4 5
1.2
VGS=10V
2
ID=20A
10
1
0.8
0 25 50 75 100 125 150 175 200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
10
ID=20A
8
6 125°C
4
2 25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+0040
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev2 : July 2011
www.aosmd.com
Page 3 of 7







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