Document
SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
DESCRIPTION
The ICTE-5 through ICTE-45C series of Transient Voltage Suppressors (TVSs) are designed for the protection of integrated circuits that require very low Clamping Voltages (VC) during a transient threat. Due to their very fast response time, protection level and high Peak Pulse Power (PPP) capability, they are extremely effective in providing protection against line transients generated by: voltage reversals, capacitive or inductive load switching, electromechanical switching, electrostatic discharge and electromagnetic coupling.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
• This series of TVS devices is designed to protect Bipolar, MOS and Schottky improved integrated circuits.
• Transient protection for CMOS, MOS, Bipolar, ICS (TTL, ECL, DTL, RTL and linear functions)
• 5.0 to 45 volts • Low clamping ratio • RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
• These transient voltage suppressors are designed for the protection of integrated circuits. Characterized by a very low clamping voltage together with a low standoff voltage, they afford a high degree of protection to: TTL, ECL, DTL, MOS, CMOS, VMOS, HMOS, NMOS and static memory circuits.
MAXIMUM RATINGS
• 1500 Watts of Peak Pulse Power (PPP) dissipation at 25oC and 10x1000μs
• tclamping (0 volts to V(BR) min): <100 ps theoretical for unidirectional and <5 ns for bidirectional
• Operating and Storage temperatures: -65oC to +150oC.
• Forward surge rating: 200 amps, 1/120 second at 25oC. (Applies to Unidirectional or single direction only).
• Steady State power dissipation: 5 watts.
• Repetition rate (duty cycle): .05%
• Clamping Factor: 1.33 @ Full rated power. 1.20 @ 50% rated power.
• Clamping Factor: The ratio of the actual VC (Clamping Voltage) to the actual V(BR) (Breakdown Votlage) as measured on a specific device.
MECHANICAL AND PACKAGING
• CASE: Void-free, transfer molded thermosetting epoxy body meeting UL94V-0
• FINISH: Tin-lead or RoHS Compliant matteTin plating solderable per MIL-STD-750, method 2026
• POLARITY: Cathode connected to case and marked. Bidirectional not marked.
• WEIGHT: 1.5 grams (approx.) • MOUNTING POSITION: Any • See package dimension on last page
ICTE-5 thru ICTE-45C, e3
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
WWW.Microsemi .COM
SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR
ELECTRICAL CHARACTERISTICS @ 25oC (UNIDIRECTIONAL)
STAND-OFF VOLTAGE (NOTE 1)
MAXIMUM REVERSE LEAKAGE
@VWM
MINIMUM* BREAKDOWN
VOLTAGE @ 1.0 mA
MICROSEMI
VWM
ID
V(BR)
PART NUMBER
VOLTS
μA
VOLTS
ICTE-5
5.0 300 6.0
ICTE-8
8.0 25 9.4
ICTE-10 10.0 2 11.7
ICTE-12 12.0 2 14.1
ICTE-15 15.0 2 17.6
ICTE-18 18.0 2 21.2
ICTE-22 22.0 2 25.9
ICTE-36 36.0 2 42.4
ICTE-45 45.0 2 52.9
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
MAXIMUM CLAMPING VOLTAGE
(Fig. 2)
IPP1 = 1A
VC VOLTS
7.1 11.3 13.7 16.1 20.1 24.2 29.8 50.6 63.3
MAXIMUM CLAMPING VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC VOLTS
7.5 11.5 14.1 16.5 20.6 25.2 32.0 54.3 70.0
MAXIMUM PEAK PULSE
CURRENT @ 10 x 1000μs
IPP3 A
160 100 90 70 60 50 40 23 19
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities for BIDIRECTIONAL)
ICTE-5C
5.0 300 6.0 7.1 7.5
ICTE-8C
8.0 25 9.4 11.4 11.6
ICTE-10C
10.0
2
11.7 14.1 14.5
ICTE-12C
12.0
2
14.1 16.7 17.1
ICTE-15C
15.0
2
17.6 20.8 21.4
ICTE-18C
18.0
2
21.2 24.8 25.5
ICTE-22C
22.0
2
25.9 30.8 32.0
ICTE-36C
36.0
2
42.4 50.6 54.3
ICTE-45C
45.0
2
52.9 63.3 70.0
C Suffix indicates Bidirectional
160 100 90 70 60
50 40 23 19
NOTE 1: TVSs are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated power supply voltages are employed.
OUTLINE AND CIRCUIT
ICTE-5 thru ICTE-45C, e3
FIGURE 1 Peak Pulse Power vs. Pulse Time (TW) in μs
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
FIGURE 2 Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
FIGURE 3 Typical Capacitance vs. Breakdown Voltage
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 4 Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
Dimensions in inches (mm)
Copyright © 2008
10-09-.