Voltage Suppressors. 1N6376 Datasheet

1N6376 Suppressors. Datasheet pdf. Equivalent

1N6376 Datasheet
Recommendation 1N6376 Datasheet
Part 1N6376
Description Transient Voltage Suppressors
Feature 1N6376; www.vishay.com ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB® Tran.
Manufacture Vishay
Datasheet
Download 1N6376 Datasheet




Vishay 1N6376
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
VBR (uni-directional)
VBR (bi-directional)
PPPM
PD
IFSM
TJ max.
Polarity
5.0 V to 18 V
6.0 V to 21.2 V
9.2 V to 21.2 V
1500 W
6.5 W
200 A
175 °C
Uni-directional, bi-directional
Package
1.5KE
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
PPPM
IPPM
PD
IFSM
VF
TJ, TSTG
LIMIT
1500
See next table
6.5
200
3.5
-55 to +175
UNIT
W
A
W
A
V
°C
Revision: 16-Jan-18
1 Document Number: 88356
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay 1N6376
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC® REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC®
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
VWM
(V)
BREAKDOWN
VOLTAGE
VBR AT 1.0 mA
(V)
MIN.
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2)
ICTE5 (2)
5.0
6.0 300 7.1 7.5 160
1N6374
1N6375
ICTE8
ICTE10
8.0 9.4 25.0 11.3 11.5 100
10.0 11.7 2.0 13.7 14.1 90
1N6376
ICTE12
12.0 14.1 2.0 16.1 16.5 70
1N6377
1N6378
ICTE15
ICTE18
15.0 17.6 2.0 20.1 20.6 60
18.0 21.2 2.0 24.2 25.2 50
BI-DIRECTIONAL TYPES
1N6382
1N6383
ICTE8C
8.0 9.4
50 11.4 11.6 100
ICTE10C 10.0 11.7 2.0 14.1 14.5 90
1N6384
ICTE12C 12.0 14.1 2.0 16.7 17.1 70
1N6385
1N6386
ICTE15C 15.0 17.6 2.0 20.8 21.4 60
ICTE18C 18.0 21.2 2.0 24.8 25.5 50
Notes
(1) “C” suffix indicates bi-directional
(2) ICTE5 and 1N6373 are not available as bi-directional
(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ICTE5-E3/54
0.968
54
ICTE5HE3_A/C (1)
0.968
C
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Revision: 16-Jan-18
2 Document Number: 88356
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay 1N6376
www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
100 000
10 000
1000
Measured at
Zero Bias
Measured at Stand-Off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1 µs
1.0 µs
10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Fig. 1 - Peak Pulse Power Rating Curve
100
1.0
10 100 200
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance Uni-Directional
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
100 000
Measured at
Zero Bias
Bi-Directional Type
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
1000
100
1.0
Measured at Stand-Off
Voltage VWM
10 100
VBR - Breakdown Voltage (V)
200
Fig. 5 - Typical Junction Capacitance
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
Peak Value
where the Peak Current
100 IPPM
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Fig. 3 - Pulse Waveform
4.0
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
1
5 10
50
Number of Cycles at 60 Hz
100
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 16-Jan-18
3 Document Number: 88356
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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