NPN Transistors. BFS17 Datasheet

BFS17 Transistors. Datasheet pdf. Equivalent

BFS17 Datasheet
Recommendation BFS17 Datasheet
Part BFS17
Description NPN Transistors
Feature BFS17; SMD Type Transistors NPN Transistors BFS17 (KFS17) ■ Features ● Collector Current Capability IC=25.
Manufacture Kexin
Datasheet
Download BFS17 Datasheet




Kexin BFS17
SMD Type
Transistors
NPN Transistors
BFS17 (KFS17)
Features
Collector Current Capability IC=25mA
Collector Emitter Voltage VCEO=15V
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Thermal Resistance From Junction to Soldering Point
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
RθJS
TJ
Tstg
Rating
25
15
2.5
25
50
300
260
150
-65 to 150
Unit
V
mA
mW
/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Noise Figure
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 1 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO VCB= 25 V , IE= 0
IEBO VEB= 2.5V , IC=0
VCE(sat) IC=25 mA, IB=2.5 mA
VBE(sat) IC=25 mA, IB=2.5mA
VCE= 1V, IC= 2mA
hFE
VCE= 1V, IC= 25mA
CC VCB= 10V, IE=ie= 0,f=1MHz
Ce VEB= 0.5V, IC=iC= 0,f=1MHz
Cre VCE= 5V, IC=1mA,f=1MHz
NF VCE= 5V, IC= 2mA,RS=50Ω, f=500MHz
VCE= 5V, IC= 2mA, f=500MHz
fT
VCE= 5V, IC= 25 mA, f=500MHz
Min Typ Max Unit
25
15 V
2.5
100
nA
100
0.5
V
1.2
25 90
25 90
1.5
2 pF
0.65
4.5 dB
1
GHz
1.6
Marking
Marking
E1*
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Kexin BFS17
SMD Type
Transistors
Typical Characterisitics
100
hFE
NPN Transistors
BFS17 (KFS17)
2.0
Cc
(pF)
1.6
1.2
50
0.8
0.4
0
0 10
VCE = 1 V; Tj = 25 °C.
20 IC (mA) 30
Fig.2 DC current gain as a function of
collector current.
2
fT
(GHz)
0
0 10
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
20 VCB (V) 30
Fig.3 Collector capacitance as a function of
collector-base voltage.
10
F
15
0
0 10 20 IC (mA) 30
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
0
04
8 12 16 20
IC (mA)
VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 °C.
Fig.5 Minimum noise figure as a function of
collector current.
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