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KTC3551T Dataheets PDF



Part Number KTC3551T
Manufacturers Kexin
Logo Kexin
Description NPN Transistors
Datasheet KTC3551T DatasheetKTC3551T Datasheet (PDF)

SMD Type Transistors NPN Transistors KTC3551T ■ Features ● Adoption of MBIT Processes. ● Large Current Capacitance. ● Low Collector-to-Emitter Saturation Voltage. ● High-Speed Switching. ● High Allowable Power Dis sipation. ● Complementary to KTA1551T. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Paramete.

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SMD Type Transistors NPN Transistors KTC3551T ■ Features ● Adoption of MBIT Processes. ● Large Current Capacitance. ● Low Collector-to-Emitter Saturation Voltage. ● High-Speed Switching. ● High Allowable Power Dis sipation. ● Complementary to KTA1551T. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP PC TJ Tstg Rating 80 80 50 5 1 3 0.9 150 -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 SMD Type Transistors NPN Transistors KTC3551T ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Symbol Test Conditions VCBO Ic= 100 μA, IE= 0 VCEO Ic= 1 mA, IB= 0 VCES Ic= 100uA, VBE= 0 VEBO IE= 100μA, IC= 0 ICBO VCB= 80 V , IE= 0 IEBO VEB= 5V , IC=0 IC=500 mA, IB=10mA VCE(sat) IC=300 mA, IB=6mA VBE(sat) IC= 500 mA, IB= 10mA hFE VCE= 2V, IC= 100mA Turn-On Time Storage Time Fall Time Collector output capacitance Transition frequency ton tstg tf Cob fT PW=20 s DC <= 1% INPUT 50 VR IB1 IB2 RB OUTPUT RL 100 F 470 F VBE =-5V VCC =25V 20IB1=-20IB2=IC =500mA VCB= 10V, IE=0,f=1MHz VCE= 10V, IC= 300mA Min Typ Max Unit 80 50 V 80 5 100 nA 100 190 mV 135 1.2 V 200 560 35 330 ns 40 6 pF 420 MHz ■ Marking Marking HK 2 www.kexin.com.cn COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) SMD Type Transistors COLLECTOR CURRENT IC (A) 50mA 20mA NPN Transistors KTC3551T ■ Typical Characterisitics I C - VCE 1K 30mA 40mA 10mA 8mA 800 6mA 4mA 600 2mA 400 200 DC CURRENT GAIN h FE 1K 500 300 100 50 30 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0.01 hFE - I C Ta=75 C Ta=25 C Ta=-25 C VCE =2V 0.03 0.1 0.3 COLLECTOR CURRENT IC (A) 1.0 1 IC /IB=20 0.5 0.3 VCE(sat) - IC 1 IC /IB=50 0.5 0.3 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.1 0.05 0.03 0.01 0.01 Ta=75 C Ta=25 C Ta=-25 C 0.03 0.1 0.3 COLLECTOR CURRENT IC (A) VBE(sat) - I C 10 IC /IB=50 5 3 1 1 Ta=-25 C 0.5 Ta=25 C Ta=75 C 0.3 0.1 0.01 0.03 0.1 0.3 COLLECTOR CURRENT IC (A) 1 COLLECTOR CURRENT IC (A) 0.1 0.05 Ta=75 C Ta=-25 C 0.03 Ta=25 C 0.01 0.01 0.03 0.1 0.3 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 COLLECTOR CURRENT IC (A) I C - VBE VCE =2V 0.2 0.4 0.6 0.8 1.0 Ta=75 Ta=25 C C Ta=-25 C BASE-EMITTER VOLTAGE VBE (V) 1 1.2 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) www.kexin.com.cn 3 SMD Type Transistors TRANSITION FREQUENCY f T (MHz) NPN Transistors KTC3551T ■ Typical Characterisitics 5K VCE =10V 3K fT - IC 1K 500 300 100 50 0.01 0.03 0.1 0.3 COLLECTOR CURRENT IC (A) 1 COLLECTOR OUTPUT CAPACITANCE Cob (pF) C ob - VCB 100 f=1MHz 50 30 10 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) 100 500 SAFE OPERATING AREA 5 3 IC MAX.(PULSED) 1 IC MAX 0.5 (CONTINUOUS) 0.3 1mS* S* S* 10mS1*0D0CmOS*PERATION 0.1 * SINGLE NONREPETITIVE 0.05 PULSE Ta=25 C CURVES MUST BE DERATED 0.03 LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm2 0.8mm) 0.01 0.1 0.3 1 3 10 . 30 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.2 MOUNTED ON A 1.0 CERAMIC BOARD (600mm2 0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 4 www.kexin.com.cn .


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