Document
SMD Type
Transistors
NPN Transistors KTC3551T
■ Features
● Adoption of MBIT Processes. ● Large Current Capacitance. ● Low Collector-to-Emitter Saturation Voltage. ● High-Speed Switching. ● High Allowable Power Dis sipation. ● Complementary to KTA1551T.
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICP PC TJ Tstg
Rating 80 80 50 5 1 3 0.9 150
-55 to 150
Unit
V
A W ℃
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SMD Type
Transistors
NPN Transistors
KTC3551T
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage DC current gain
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 1 mA, IB= 0
VCES Ic= 100uA, VBE= 0
VEBO IE= 100μA, IC= 0
ICBO VCB= 80 V , IE= 0
IEBO VEB= 5V , IC=0
IC=500 mA, IB=10mA VCE(sat)
IC=300 mA, IB=6mA
VBE(sat) IC= 500 mA, IB= 10mA
hFE VCE= 2V, IC= 100mA
Turn-On Time
Storage Time
Fall Time Collector output capacitance Transition frequency
ton
tstg
tf Cob fT
PW=20 s DC <= 1%
INPUT 50
VR
IB1 IB2 RB
OUTPUT RL
100 F
470 F
VBE =-5V
VCC =25V
20IB1=-20IB2=IC =500mA
VCB= 10V, IE=0,f=1MHz
VCE= 10V, IC= 300mA
Min Typ Max Unit 80 50
V 80 5
100 nA
100 190
mV 135 1.2 V 200 560
35
330 ns
40
6 pF 420 MHz
■ Marking
Marking
HK
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COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
SMD Type
Transistors
COLLECTOR CURRENT IC (A) 50mA
20mA
NPN Transistors
KTC3551T
■ Typical Characterisitics
I C - VCE
1K
30mA 40mA
10mA 8mA
800 6mA
4mA 600
2mA 400
200
DC CURRENT GAIN h FE
1K 500 300
100 50 30
0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 0.01
hFE - I C
Ta=75 C Ta=25 C Ta=-25 C
VCE =2V
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1.0
1 IC /IB=20
0.5 0.3
VCE(sat) - IC
1 IC /IB=50
0.5 0.3
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
0.1 0.05 0.03
0.01 0.01
Ta=75 C Ta=25 C
Ta=-25 C
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
VBE(sat) - I C
10 IC /IB=50
5 3
1
1 Ta=-25 C 0.5 Ta=25 C Ta=75 C 0.3
0.1 0.01
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1
COLLECTOR CURRENT IC (A)
0.1 0.05 Ta=75 C Ta=-25 C 0.03 Ta=25 C
0.01 0.01
0.03
0.1
0.3
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
COLLECTOR CURRENT IC (A)
I C - VBE
VCE =2V
0.2 0.4 0.6 0.8 1.0
Ta=75 Ta=25
C C
Ta=-25 C
BASE-EMITTER VOLTAGE VBE (V)
1 1.2
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
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SMD Type
Transistors
TRANSITION FREQUENCY f T (MHz)
NPN Transistors
KTC3551T
■ Typical Characterisitics
5K VCE =10V 3K
fT - IC
1K
500 300
100
50 0.01
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
C ob - VCB
100 f=1MHz
50 30
10
5 3
1 0.1 0.3 1
3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (A)
100 500
SAFE OPERATING AREA
5 3 IC MAX.(PULSED)
1 IC MAX 0.5 (CONTINUOUS) 0.3
1mS*
S* S*
10mS1*0D0CmOS*PERATION
0.1 * SINGLE NONREPETITIVE
0.05
PULSE Ta=25 C CURVES MUST BE DERATED
0.03 LINEARLY WITH INCREASE IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD (600mm2 0.8mm) 0.01
0.1 0.3
1
3 10
.
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION PC (W)
Pc - Ta
1.2 MOUNTED ON A
1.0 CERAMIC BOARD (600mm2 0.8mm)
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C)
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