SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLI...
SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR
NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.
FEATURES ᴌAdoption of MBIT Processes. ᴌLarge Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dis sipation. ᴌComplementary to KTA1551T.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCES VCEO VEBO
IC ICP IB PC * Tj
80 80 50 5 1.0 3 200 0.9 150
Storage Temperature Range
Tstg -55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT V
V
V
A
mA W ᴱ ᴱ
C L
A F GG
E KB
23 1
D
DIM A B
C D E F G
H I J K L
MILLIMETERS 2.9 +_0.2
1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1
2.8+0.2/-0.3 1.9+_ 0.2
0.95 0.16+_ 0.05 0.00-0.10
0.25+0.25/-0.15 0.60 0.55
I
H JJ
1. EMITTER 2. BASE 3. COLLECTOR
TSM Marking
H KType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob
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