NPN TRANSISTOR. KTC3552T Datasheet

KTC3552T TRANSISTOR. Datasheet pdf. Equivalent

KTC3552T Datasheet
Recommendation KTC3552T Datasheet
Part KTC3552T
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC3552T; SEMICONDUCTOR TECHNICAL DATA KTC3552T EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVE.
Manufacture KEC
Datasheet
Download KTC3552T Datasheet




KEC KTC3552T
SEMICONDUCTOR
TECHNICAL DATA
KTC3552T
EPITAXIAL PLANAR NPN TRANSISTOR
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1552T.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC *
Tj
Tstg
80
80
50
6
3
6
600
0.9
150
-55150
* Package mounted on a ceramic board (600Ὅᴧ0.8)
UNIT
V
V
V
A
mA
W
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
H LType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE
fT
Cob
TEST CONDITION
VCB=40V, IE=0
VEB=4V, IC=0
IC=10A, IE=0
IC=100A, VBE=0
IC=1mA, IB=0
IE=10A, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
MIN.
-
-
80
80
50
6
-
-
-
200
-
-
Swiitching
Time
Turn-On Time
Storage Time
Fall Time
ton
PW=20µs
DC <= 1%
IB2IB1
INPUT
RB
tstg 50VR
OUTPUT
RL
-
-
100µF
470µF
tf
VBE =-5V
VCC =25V
-
10IB1=-10IB2=IC =1A
TYP.
-
-
-
-
-
-
80
140
0.88
-
380
13
MAX.
0.1
0.1
-
-
-
-
120
210
1.2
560
-
-
UNIT
A
A
V
V
V
V
mV
mV
V
MHz
pF
35 -
300 -
nS
22 -
2001. 6. 28
Revision No : 0
1/3



KEC KTC3552T
KTC3552T
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
I C - VCE
100mA
80mA
60mA
40mA
20mA
10mA
5.0mA
IB=0mA
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
1K
500
Ta=75 C
300
Ta=25 C Ta=-25 C
100
50
30
VCE =2V
10
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
3
VCE(sat) - I C
1K IC /IB =20
500
300
100
50
30
10
0.01
Ta=75 C
Ta=25 C
Ta=-25 C
0.03 0.1
0.3 1
COLLECTOR CURRENT I C (A)
3
VBE(sat) - I C
1K
IC /IB =50
500
300
100 Ta=-25 C
50 Ta=25 C Ta=75 C
30
10
0.01
0.03 0.1
0.3 1
COLLECTOR CURRENT I C (A)
3
2001. 6. 28
Revision No : 0
1K IC /IB =50
500
300
VCE(sat) - I C
100
50
30
Ta=75
Ta=25 C
C
Ta=-25
C
10
0.01
0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
3
3.2
VCE =2V
2.8
2.4
I C - VBE
2.0
1.6
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1.2
2/3



KEC KTC3552T
KTC3552T
1K
VCE =10V
500
300
fT - IC
100
50
30
10
0.01
0.03 0.1
0.3 1
COLLECTOR CURRENT IC (A)
3
SAFE OPERATING AREA
10 IC MAX.(PULSED)
5
3
IC MAX
(CONTIN-
1 UOUS)
0.5
0.3
DC OPERA1T0I0OmNS*
0.1 * SINGLE NONREPETITIVE
0.05
PULSE Ta=25 C
CURVES MUST BE DERATED
0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
0.01 (600mm2 `0.8mm)
0.1 0.3 1
3 10
30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
C ob - VCB
100
50
30
10
5
3
1
0.1
0.3 0.5 1
f=1MHz
3 5 10
30 50
COLLECTOR-BASE VOLTAGE VCB (V)
Pc - Ta
1.0
MOUNTED ON A
0.8 CERAMIC BOARD
(600mm2 `0.8mm)
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 28
Revision No : 0
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