NPN TRANSISTOR. KTC3553T Datasheet

KTC3553T TRANSISTOR. Datasheet pdf. Equivalent

KTC3553T Datasheet
Recommendation KTC3553T Datasheet
Part KTC3553T
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC3553T; SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. F.
Manufacture KEC
Datasheet
Download KTC3553T Datasheet




KEC KTC3553T
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
Ultrasmall-Sized Package permitting applied sets to be
made small and slim.
High Allowable Power Dissipation.
Complementary to KTA1553T.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
6
Collector Current
DC
Pulse
IC
ICP
5
7
Base Current
IB 1.2
Collector Power Dissipation
PC * 0.9
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55150
* Package mounted on a ceramic board (600Ὅᴧ0.8)
UNIT
V
V
V
A
A
W
KTC3553T
EPITAXIAL PLANAR NPN TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
H MType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
TEST CONDITION
VCB=40V, IE=0
VEB=4V, IC=0
IC=10A, IE=0
IC=1mA, IB=0
IE=10A, IC=0
IC=2A, IB=40mA
IC=2A, IB=40mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
MIN.
-
-
60
50
6
-
-
200
-
-
Swiitching
Time
Turn-On Time
Storage Time
Fall Time
ton
PW=20µs
DC <= 1%
I
IB1
B2
INPUT
RB
tstg 50VR
OUTPUT
24Ω
-
-
100µF
470µF
tf
VBE =-5V
VCC =12V
-
20IB1=-20IB2=IC =2.5A
TYP.
-
-
-
-
-
100
0.80
-
330
26
32
420
28
MAX.
0.1
0.1
-
-
-
150
1.2
560
-
-
UNIT
A
A
V
V
V
mV
V
MHz
pF
-
- nS
-
2001. 6. 28
Revision No : 0
1/3



KEC KTC3553T
KTC3553T
I C - VCE
5
4
90mA
80mA
3
70mA
60mA
50mA
40mA
30mA
20mA
2 10mA
1
0 IB=0mA
0 100 200 300 400 500
COLLECTOR-EMITTER VOLTAGE VCE (mV)
hFE - I C
1K
500 Ta=75 C
300 Ta=25 C
Ta=-25 C
100
50
30
VCE =2V
10
0.01 0.03 0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT IC (A)
35
1K
IC /IB =20
500
300
VCE(sat) - I C
100
50
30
10
0.01
Ta=75 C
Ta=25 C
Ta=-25 C
0.03 0.05 0.1
0.3 0.5 1
35
COLLECTOR CURRENT IC (A)
VBE(sat) - I C
10K IC /IB =50
5K
3K
1K Ta=-25 C
500 Ta=25 C Ta=75 C
300
100
0.01
0.03 0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT IC (A)
35
2001. 6. 28
Revision No : 0
2k
IC /IB =50
1k
500
300
VCE(sat) - I C
100
50
30
10
0.01
Ta=75 C
Ta=25 C
Ta=-25 C
0.03 0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT IC (A)
35
I C - VBE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VCE =2V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
BASE-EMITTER VOLTAGE VBE (V)
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KEC KTC3553T
KTC3553T
1K
VCE =10V
500
300
f T - IC
100
50
30
10
0.01
0.030.05 0.1
0.3 0.5 1
COLLECTOR CURRENT IC (A)
35
SAFE OPERATING AREA
10 IC MAX.(PULSED)
5
3 IC MAX
(CONTIN-
1 UOUS)
0.5
0.3
DC OPERATI1O00NmS1*0mS*
0.1 * SINGLE NONREPETITIVE
0.05
PULSE Ta=25 C
CURVES MUST BE DERATED
0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
0.01 (600mm2 `0.8mm)
0.1 0.3
1
3 10
30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
C ob - VCB
1K
f=1MHz
500
300
100
50
30
10
1
35
10
3 0 50
COLLECTOR-BASE VOLTAGE VCB (V)
Pc - Ta
1.2
MOUNTED ON A
1.0 CERAMIC BOARD
(600mm2 `0.8mm)
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 28
Revision No : 0
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