NPN TRANSISTOR. KTC4370 Datasheet

KTC4370 TRANSISTOR. Datasheet pdf. Equivalent

KTC4370 Datasheet
Recommendation KTC4370 Datasheet
Part KTC4370
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC4370; SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. F.
Manufacture KEC
Datasheet
Download KTC4370 Datasheet




KEC KTC4370
SEMICONDUCTOR
TECHNICAL DATA
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTA1659/A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base
Voltage
KTC4370
KTC4370A
Collector-Emitter
Voltage
KTC4370
KTC4370A
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
160
180
160
180
5
1.5
0.15
20
150
-55 150
UNIT
V
V
V
A
A
W
A
U
E
LL
M
DD
NN
T
T
123
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 2.70Ź0.30
S D 0.85 MAX
E Ѹ3.20Ź0.20
F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM
N
1.30
2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR
S
10Ɓ
25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
Collector-Emitter
Breakdown Voltage
KTC4370
KTC4370A
V(BR)CEO
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Note : hFE Classification O:70~140,
Cob
Y:120~240
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=10V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN.
-
-
160
180
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
25
MAX.
1.0
1.0
-
-
240
1.5
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2002. 7. 16
Revision No : 2
1/3



KEC KTC4370
KTC4370/A
2.0
1.6 250
1.2
I C - VCE
COMMON EMITTER
Ta=25 C
140 80
30
12
0.8 5
3
0.4 2
1
0 IB=0mA
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
500
300
COMMON EMITTER
Ta=25 C
100
50
30
10
5
3 10 30 100 300 1K 2K
COLLECTOR CURRENT IC (mA)
hFE - IC
500
300 Ta=100 C
Ta=25 C
100 Ta=0 C
50
30 VCE =10V
VCE =5V
COMMON EMITTER
10
Tc=25 C
5
3 10 30 100 300 1K 2K
COLLECTOR CURRENT IC (mA)
VCE(sat) - I C
1.0
COMMON EMITTER
Ta=25 C
0.5
0.3
0.1 I C/IICB/=IB10=5
0.05
0.03
5 10
30 100 300 1K
COLLECTOR CURRENT IC (mA)
3K
VCE(sat) - I C
5.0
COMMON EMITTER
3.0 IC /IB =10
1.0
0.5
0.3
0.1
0.05
5
10
Ta=100
C
25
0
30 100 300 1K
COLLECTOR CURRENT IC (mA)
3K
2002. 7. 16
Revision No : 2
I C - VBE
1.6K
1.4K
1.2K
COMMON EMITTER
VCE =5V
1K
800
600
400
200
0
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
1.4
2/3



KEC KTC4370
KTC4370/A
C ob - VCB
100
IE =0
50 f=1MHz
Tc=25 C
30
10
5
3
1
0.5 1
3 5 10
30 50 100 200
COLLECTOR-BASE VOLTAGE VCB (V)
fT - IC
500
COMMON EMITTER
300 Tc=25 C
VCE =5V
100 VCE =2V
50
30
10
2 5 10
30 50 100
300 500
COLLECTOR CURRENT I C (mA)
SAFE OPERATING AREA
5
3 IC MAX(PULSED) *
* SINGLE
NONREPETITIVE
1
0.5
0.3
DC
I C MAX
(CONTINUOUS)
OPLEI5RTM0HA0ImET1T0RIsE0OMDm*NsA*L
PULSE Tc=25
**
C
0.1 CURVES MUST BE
DERATED LINEARLY WITH
0.05 INCREASE IN TEMPERATURE
0.03
VCEO MAX=160V
KTC4370
VCEO MAX=180V
KTC4370A
0.01
3 5 10
30 50
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
25
20 1
15
Pc - Ta
1 Tc=Ta
INFINITE HEAT SINK
2 NO HEAT SINK
10
5
2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2002. 7. 16
Revision No : 2
3/3







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