NPN Transistors. KX2000N Datasheet

KX2000N Transistors. Datasheet pdf. Equivalent

KX2000N Datasheet
Recommendation KX2000N Datasheet
Part KX2000N
Description NPN Transistors
Feature KX2000N; SSMMDD TTyyppee NPN Transistors KX2000N Transistors Features High Voltage Transistors Pb-Free Pac.
Manufacture Kexin
Datasheet
Download KX2000N Datasheet




Kexin KX2000N
SSMMDD TTyyppee
NPN Transistors
KX2000N
Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
21
U nit :mm
0.1 +0.01
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
250
180
5
0.2
0.15
150
-55 to 150
Unit
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 1 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC= 50 mA, IB= 5mA
hFE(1) VCE=5V, IC=10mA
fT VCE= 5V, IC=10mA,f=30MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
Classification of hfe
Marking
Range
20N
100-250
3
0.5 +0.1
-0.1
0.3 +0.25
-0.05
1. Base
2. Emitter
3. Collecter
Min Typ Max Unit
250
180 V
5
100
nA
100
0.5
V
1.0
100 250
100 300 MHz
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