KX2000N

SSMMDD TTyyppee NPN Transistors KX2000N Transistors Features High Voltage Transistors Pb-Free Packages are Available SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 21 U nit :mm 0.1 +0.01 -0.01 +0.151.6 - 0.15 0.55 +0.050.8 - 0.05 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 250 180 5 0.2 0.15 150 -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 120 V , IE= 0 IEBO VEB= 4V , IC=0 VCE(sat) IC=50 mA, IB=5mA VBE(sat) IC= 50 mA, IB= 5mA hFE(1) VCE=5V, IC=10mA fT VCE= 5V, IC=10mA,f=30MHz * Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%. ■ Classification of hfe Marking Range 20N 100-250 3 0.5 +0.1 -0.1 0.3 +0.25 -0.05 +0.75 0.05 - 0.05 +0.8 0.1 - 0.1 0.35 1. Base 2. Emitter 3. Collecter Min Typ Max Unit 250 180 V 5 100 nA 100 0.5 V 1.0 100 250 100 300 MHz www.kexin.com.cn 1 ...