PZT2222A

Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć E SOT-223  1. BASE 2. COLLECTOR 3. EMITTER f  f 5 5  0D[ efe efe f  efe  f   f  123 Unit : mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN MAX Collector-base breakdown voltage V(BR)CBO Ic= 10­Aˈ IE=0 75 Collector-emitter breakdown voltage V(BR)CEO Ic= 10mAˈ IB=0 40 Emitter-base breakdown voltage V(BR)EBO IE=10­Aˈ IC=0 6 Collector cut-off current ICBO VCB=60V , IE=0 0. 01 Emitter cut-off current IEBO VEB= 3V , IC=0 0. 01 hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 DC current gain hFE(3) hFE(4) VCE=10V, IC= 10mA VCE=10V, IC= 150mA 75 100 300 hFE(5) VCE=1V, IC= 150mA 50 hFE(6) VCE=10V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB= 15mA 1 0.3 Base-emitter saturation voltage VBE(sat) VBE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 0.6 2.0 1.2 Transition frequency VCE=20V, IC= 20mA fT f=100MHz 300 Output Capacitance VCB=10V, IE= 0 Cob f=1MHz 8 Delay time Rise time Storage time Fall time td VCC=30V, IC=150mA tr V...