Purpose Transistor. PZT2222A Datasheet

PZT2222A Transistor. Datasheet pdf. Equivalent

PZT2222A Datasheet
Recommendation PZT2222A Datasheet
Part PZT2222A
Description General Purpose Transistor
Feature PZT2222A; Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor .
Manufacture SeCoS
Datasheet
Download PZT2222A Datasheet




SeCoS PZT2222A
Elektronische Bauelemente
RoHS Compliant Product
PZT2222A
NPN Silicon
General Purpose Transistor
C
FEATURES
Power dissipation
C
B
P CM : 1 W˄Tamb=25ć˅
Collector current
I CM : 0.6 A
Collector-base voltage
V (BR)CBO : 75 V
Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
E
SOT-223

1. BASE
2. COLLECTOR
3. EMITTER
f
5
5

0D[
efe
efe
f 
efe


f 
123
Unit : mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol
Test conditions
MIN MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 10­Aˈ IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mAˈ IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10­Aˈ IC=0
6
Collector cut-off current
ICBO VCB=60V , IE=0
0. 01
Emitter cut-off current
IEBO VEB= 3V , IC=0
0. 01
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
hFE(4)
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
75
100
300
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB= 15mA
1
0.3
Base-emitter saturation voltage
VBE(sat)
VBE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
0.6
2.0
1.2
Transition frequency
VCE=20V, IC= 20mA
fT f=100MHz
300
Output Capacitance
VCB=10V, IE= 0
Cob f=1MHz
8
Delay time
Rise time
Storage time
Fall time
td VCC=30V, IC=150mA
tr VBE(off)=0.5V,IB1=15mA
tS VCC=30V, IC=150mA
tf IB1= IB2= 15mA
10
25
225
60
UNIT
V
V
V
­A
­A
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4



SeCoS PZT2222A
Elektronische Bauelemente
ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS
PZT2222A
NPN Silicon
General Purpose Transistor
+16 V
0
-ā2 V
1.0 to 100 μs,
DUTY CYCLE 2.0%
< 2 ns
1 kΩ
Figure 1. Turn–On Time
+ā30 V
200
+16 V
1.0 to 100 μs,
DUTY CYCLE 2.0%
CS* < 10 pF
0
-14 V
< 20 ns
1k
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
-ā4 V
Figure 2. Turn–Off Time
+ā30 V
200
CS* < 10 pF
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
1.0
0.8
0.6 IC = 1.0 mA
10 mA
150 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IB, BASE CURRENT (mA)
2.0 3.0 5.0
Figure 4. Collector Saturation Region
TJ = 25°C
500 mA
10 20 30 50
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4



SeCoS PZT2222A
Elektronische Bauelemente
PZT2222A
NPN Silicon
General Purpose Transistor
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
500
300
200 ts = ts - 1/8 tf
100
70
50
tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
10
RS = OPTIMUM
8.0
IC = 1.0 mA, RS = 150 Ω
500 μA, RS = 200 Ω
RS = SOURCE
RS = RESISTANCE
100 μA, RS = 2.0 kΩ
6.0 50 μA, RS = 4.0 kΩ
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
10
f = 1.0 kHz
8.0
IC = 50 μA
100 μA
6.0 500 μA
1.0 mA
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4







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