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PZT2907A Dataheets PDF



Part Number PZT2907A
Manufacturers SeCoS
Logo SeCoS
Description Silicon Planar Medium Power Transistor
Datasheet PZT2907A DatasheetPZT2907A Datasheet (PDF)

Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION  The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. SOT-223 MARKING Collector 2907A   = Date code Base BCE Emitter REF. A B C D E F I O MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value Collector to Base Voltage Col.

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Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION  The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. SOT-223 MARKING Collector 2907A   = Date code Base BCE Emitter REF. A B C D E F I O MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PD TJ, TSTG -60 -60 -5 -600 1.5 +150, -55 ~ +150 Millimeter Min. Max. 6.30 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.60 REF. 0.60 0.80 0.02 0.10 0° 10° REF. G H J K L M N Millimeter Min. Max. 0.02 0.10 1.50 2.00 0.25 0.35 0.85 1.05 2.30 REF. 2.90 3.10 13 TYP. Unit V V V mA W ℃ ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 hFE5 Min. -60 -60 -5 75 100 100 100 50 Typ. - - -0.2 -0.5 180 - Max. - - -10 -50 -0.4 -1.6 -1.3 -2.6 300 - Transition Frequency fT 200 - - Collector Output Capacitance COB - - 8 *Pulse Test:Pulse width ≦ 380 us, Duty cycle ≦ 2 % http://www.SeCoSGmbH.com/ 31-May-2010 Rev. B Unit Test Conditions V IC = -10uA V IC = -10mA V nA nA V V V V MHz IC = -10uA VCB = -50V VCE= -30V, VBE = -0.5V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCE = -10V, IC = -100 uA VCE = -10V, IC = -1mA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA VCB = -20V, IC = -50mA, f =100 MHz pF VCB = -10 V, f = 1 MHz Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES PZT2907A PNP Silicon Silicon Planar Medium Power Transistor http://www.SeCoSGmbH.com/ 31-May-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2 .


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