Document
Elektronische Bauelemente
PZT2907A
PNP Silicon Silicon Planar Medium Power Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.
SOT-223
MARKING
Collector
2907A
= Date code
Base
BCE
Emitter
REF.
A B C D E F I O
MAXIMUM RATINGS (TA=25 °C, unless otherwise specified)
Parameter
Symbol
Value
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PD TJ, TSTG
-60 -60 -5 -600 1.5 +150, -55 ~ +150
Millimeter Min. Max. 6.30 6.70 6.70 7.30 3.30 3.70 1.42 1.90
4.60 REF. 0.60 0.80 0.02 0.10 0° 10°
REF.
G H J K L M N
Millimeter Min. Max.
0.02 0.10 1.50 2.00 0.25 0.35 0.85 1.05
2.30 REF. 2.90 3.10
13 TYP.
Unit
V V V mA W ℃
ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage
Base - Emitter Voltage
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO ICBO ICEX
VCE(sat)1 VCE(sat)2 VBE(sat) VBE(sat)
hFE1 hFE2 hFE3 hFE4 hFE5
Min.
-60
-60
-5 75 100 100 100 50
Typ.
-
-
-0.2 -0.5 180 -
Max.
-
-
-10 -50 -0.4 -1.6 -1.3 -2.6
300 -
Transition Frequency
fT
200 -
-
Collector Output Capacitance
COB - - 8
*Pulse Test:Pulse width ≦ 380 us, Duty cycle ≦ 2 %
http://www.SeCoSGmbH.com/
31-May-2010 Rev. B
Unit Test Conditions
V IC = -10uA
V IC = -10mA
V nA nA V V V V
MHz
IC = -10uA VCB = -50V VCE= -30V, VBE = -0.5V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCE = -10V, IC = -100 uA VCE = -10V, IC = -1mA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA
VCB = -20V, IC = -50mA, f =100 MHz
pF VCB = -10 V, f = 1 MHz
Any changes of specification will not be informed individually.
Page 1 of 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
PZT2907A
PNP Silicon Silicon Planar Medium Power Transistor
http://www.SeCoSGmbH.com/
31-May-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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