Power Transistor. PZT2907A Datasheet

PZT2907A Transistor. Datasheet pdf. Equivalent

PZT2907A Datasheet
Recommendation PZT2907A Datasheet
Part PZT2907A
Description Silicon Planar Medium Power Transistor
Feature PZT2907A; Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Complia.
Manufacture SeCoS
Datasheet
Download PZT2907A Datasheet




SeCoS PZT2907A
Elektronische Bauelemente
PZT2907A
PNP Silicon
Silicon Planar Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT2907A is designed for general purpose amplifier
and high-speed switching, medium power switching applications.
SOT-223
MARKING
Collector
2907A

= Date code
Base
BCE
Emitter
REF.
A
B
C
D
E
F
I
O
MAXIMUM RATINGS (TA=25 °C, unless otherwise specified)
Parameter
Symbol
Value
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-60
-60
-5
-600
1.5
+150, -55 ~ +150
Millimeter
Min. Max.
6.30 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.60 REF.
0.60 0.80
0.02 0.10
0° 10°
REF.
G
H
J
K
L
M
N
Millimeter
Min. Max.
0.02 0.10
1.50 2.00
0.25 0.35
0.85 1.05
2.30 REF.
2.90 3.10
13 TYP.
Unit
V
V
V
mA
W
ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown
Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut - Off Current
Collector - Emitter Saturation Voltage
Base - Emitter Voltage
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)
VBE(sat)
hFE1
hFE2
hFE3
hFE4
hFE5
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
Transition Frequency
fT
200 -
-
Collector Output Capacitance
COB - - 8
*Pulse TestPulse width 380 us, Duty cycle 2 %
http://www.SeCoSGmbH.com/
31-May-2010 Rev. B
Unit Test Conditions
V IC = -10uA
V IC = -10mA
V
nA
nA
V
V
V
V
MHz
IC = -10uA
VCB = -50V
VCE= -30V, VBE = -0.5V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
VCE = -10V, IC = -100 uA
VCE = -10V, IC = -1mA
VCE = -10V, IC = -10mA
VCE = -10V, IC = -150mA
VCE = -10V, IC = -500mA
VCB = -20V, IC = -50mA,
f =100 MHz
pF VCB = -10 V, f = 1 MHz
Any changes of specification will not be informed individually.
Page 1 of 2



SeCoS PZT2907A
Elektronische Bauelemente
CHARACTERISTIC CURVES
PZT2907A
PNP Silicon
Silicon Planar Medium Power Transistor
http://www.SeCoSGmbH.com/
31-May-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)