Switching Transistors. PZT2907 Datasheet

PZT2907 Transistors. Datasheet pdf. Equivalent

PZT2907 Datasheet
Recommendation PZT2907 Datasheet
Part PZT2907
Description Suface Mount Si-Epitaxial Planar Switching Transistors
Feature PZT2907; PZT2907 / PZT2907A PZT2907 / PZT2907A PNP Suface Mount Si-Epitaxial Planar Switching Transistors .
Manufacture Diotec
Datasheet
Download PZT2907 Datasheet




Diotec PZT2907
PZT2907 / PZT2907A
PZT2907 / PZT2907A
PNP
Suface Mount Si-Epitaxial Planar Switching Transistors
Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage
Version 2006-05-09
6.5±0.2
3±0.1
4
1.65
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Type
Code
1 0.7
2.3
23
3.25
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Base-volt. - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E open
B open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
PZT2907
PZT2907A
40 V
60 V
60 V
60 V
5V
1.3 W 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Collector-cutoff current – Kollektor-Reststrom
IE = 0, - VCB = 50 V
PZT2907
PZT2907A
IE = 0, - VCB = 50 V, Tj = 150°C
PZT2907
PZT2907A
Emitter-cutoff current – Emitter-Reststrom
IC = 0, - VEB = 3 V
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
Base saturation voltage – Basis-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
PZT2907
PZT2907A
- ICBO
- ICBO
- ICBO
- ICBO
- IEBO
- VCEsat
- VCEsat
- VBEsat
- VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 20 nA
– – 10 nA
– – 20 µA
– – 10 µA
– –- 10 nA
– – 0.4 V
– – 1.6 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1



Diotec PZT2907
PZT2907 / PZT2907A
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- IC = 0.1 mA, - VCE = 10 V
PZT2907
PZT2907A
- IC = 1 mA, - VCE = 10 V
PZT2907
PZT2907A
- IC = 10 mA, - VCE = 10 V
PZT2907
PZT2907A
- IC = 150 mA, - VCE = 10 V
PZT2907
PZT2907A
- IC = 500 mA, - VCE = 10 V
PZT2907
PZT2907A
Gain-Bandwidth Product – Transitfrequenz
- IC = 20 mA, - VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Switching times – Schaltzeiten
delay time
rise time
- VCC = 30 V, - IC = 150 mA,
- IB1 = 15 mA
storage time
fall time
- VCC = 6 V, - IC = 150 mA,
- IB1 = - IB2 = 15 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
fT
CCBO
CEBO
td
tr
ts
tf
RthA
RthS
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
75 –
50 –
100 –
75 –
100 –
100 – 300
100 – 300
30 –
50 –
200 MHz
– – 8 pF
– – 30 pf
– – 10
– – 40
– – 80
– – 30
< 93 K/W 1)
< 27 K/W
PZT2222, PZT2222A
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG







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