RoHS PZT3906
PZT3906 TRANSISTOR (PNP)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
....
RoHS PZT3906
PZT3906
TRANSISTOR (
PNP)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: -0.2 A
Collector-base voltage
V(BR)CBO: -40
V
OOperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
Emitter cut-off current
TRDC current gain ECCollector-emitter saturation voltage ELBase-emitter saturation voltage
Transition frequency
JCollector output capacitance ENoise figure WDelay Time
Symbol Test conditions
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat) VCE(sat) VBE(sat) VBE(sat)
fT Cob
NF
td
Ic=-10µA,IE=0 Ic=-1mA,IB=0 IE=-10µA,IC=0 VCB=-30V,IE=0 VCE=-30V,IB=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA VCE=-20V,IC=-10mA,f=100MHz VCB=-0.5V,IE=0,f=100KHz VCE=-5V,Ic=-0.1mA, f=10HZ to15.7KHz,Rg=1KΩ VCC=-3.0Vdc,VBE=-0.5Vdc
MIN TYP MAX UNIT
-40 -40 -5
60 80 100 60 30
-0.65
250
-0.05 -0.5
V V V µA µA
300
-0.25 -0.4 -0.85 -0.95
4.5
V V V V MHz pF
4 dB
35 nS
Rise Time
tr IC=-10mAdc,IB1=-1.0mAdc
35 nS
Storage Time Fall Time
ts VCC=-3.0Vdc,IC=-10mAdc tf IB1=IB2=-1.0mAdc
225 nS 75 nS
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