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PNP Transistor. PZT3906 Datasheet |
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PZT3906
PZT3906 TRANSISTOR (PNP)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: -0.2 A
Collector-base voltage
V(BR)CBO: -40
V
OOperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
Emitter cut-off current
TRDC current gain
ECCollector-emitter saturation voltage
ELBase-emitter saturation voltage
Transition frequency
JCollector output capacitance
ENoise figure
WDelay Time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
NF
td
Ic=-10µA,IE=0
Ic=-1mA,IB=0
IE=-10µA,IC=0
VCB=-30V,IE=0
VCE=-30V,IB=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-0.5V,IE=0,f=100KHz
VCE=-5V,Ic=-0.1mA,
f=10HZ to15.7KHz,Rg=1KΩ
VCC=-3.0Vdc,VBE=-0.5Vdc
MIN TYP MAX UNIT
-40
-40
-5
60
80
100
60
30
-0.65
250
-0.05
-0.5
V
V
V
µA
µA
300
-0.25
-0.4
-0.85
-0.95
4.5
V
V
V
V
MHz
pF
4 dB
35 nS
Rise Time
tr IC=-10mAdc,IB1=-1.0mAdc
35 nS
Storage Time
Fall Time
ts VCC=-3.0Vdc,IC=-10mAdc
tf IB1=IB2=-1.0mAdc
225 nS
75 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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