PZT3906

Elektronische Bauelemente Description The PZT3906 is designed for general purpose switching and amplifier applications. RoHS Compliant Product PZT3906 PNP Transistor Epitaxial Planar Transistor SOT-223 3906 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Tamb =25oC, unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 -5 IC Collector Current -200 PD Total Power Dissipation 1.5 TJ,Tstg Junction and Storage Temperature -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO *BVCEO BVEBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min -40 -40 -5 - -0.65 60 80 100 60 30 250 - Typ. - -0.2 - -0.84 - - Max - -50 -50 -0.25 -0.4 -0.85 -0.95 300 - 4.5 Unit V V V nA nA V V V MHz pF Test Conditions IC=-10 µA IC=-1 mA IE=-10 µA VCB=-3 0V VEB=-3V IC=-10mA,IB=-1mA I C=- 50m A,IB=-5 mA I C=- 10m A,IB=-1 mA I C=- 50m A,IB=-5 mA ...