RoHS PZT4401
PZT4401 TRANSISTOR (NPN)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
....
RoHS PZT4401
PZT4401
TRANSISTOR (
NPN)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: 0.6 A
Collector-base voltage
V(BR)CBO: 60
V
OOperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
Emitter cut-off current
TRDC current gain ECCollector-emitter saturation voltage ELBase-emitter saturation voltage
Transition frequency
JCollector capacitance EEmitter capacitance
Delay time
WRise time
Symbol Test conditions
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT CC CE
td tr
Ic=100µA,IE=0 Ic=1mA,IB=0 IE=100µA,IC=0 VCB=60V,IE=0 VEB=6V,IC=0 VCE=1V,IC=0.1mA VCE=1V,IC=1mA VCE=1V,IC=10mA VCE=1V,IC=150mA VCE=2V,IC=500mA IC=150mA,IB=15mA IC=500mA,IB=50mA IC=150mA,IB=15mA IC=500mA,IB=50mA VCE=10V,IC=20mA,f=100MHz VCB=5V,IE=0,f=1MHz VEB=0.5V,IC=0,f=1MHz
VCC=29.5V, IC=150mA
MIN TYP MAX UNIT 60 V 40 V 6V
50 nA 50 nA 20 40 80 100 300 40 0.4 V 0.75 V 0.95 V 1.2 V 200 MHz 8 pF 30 pF 15 nS 20 nS
Storage time
tS VBB=3.5V,IB1=- IB2=15mA
200 nS
Fall time
tf
60 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
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