Planar Transistor. PZT4401 Datasheet

PZT4401 Transistor. Datasheet pdf. Equivalent

PZT4401 Datasheet
Recommendation PZT4401 Datasheet
Part PZT4401
Description Epitaxial Planar Transistor
Feature PZT4401; Elektronische Bauelemente Description RoHS Compliant Product The PZT4401 is designed for general .
Manufacture SeCoS
Datasheet
Download PZT4401 Datasheet




SeCoS PZT4401
Elektronische Bauelemente
Description
RoHS Compliant Product
The PZT4401 is designed for general
purpose switching and amplifier applications.
PZT4401
NPN Transistor
Epitaxial Planar Transistor
SOT-223
Features
*High Power Dissipation: 1500mW at 25 oC
*High DC Current Gain: 100~300 at 150mA
*Complementary to PZT4403
440 1
ABSOLUTE MAXIMUM RATINGS Ta=25oC
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
PD Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
60
40
5
600
1.5
-55~+150
Units
V
V
V
mA
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Symbol
BVCBO
*BVCEO
BVEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min
60
40
5
-
-
-
-
750
20
40
80
*hFE4
*hFE5
100
40
Gain-Bandwidth Product
Output Capacitance
fT 250
Cob -
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
Test Conditions
IC= 100µA
IC= 1mA
IE= 10µA
VCE= 35V,VBE=0.4V
IC=150m A,IB=15mA
IC=500m A,IB=50mA
IC=150m A,IB=15mA
IC=500m A,IB=50mA
VCE= 1 V, IC=0.1 mA
VCE= 1 V, IC=1mA
VCE= 1 V, IC=10 mA
VCE= 1 V, IC=150mA
VCE= 2 V, IC=500mA
VCE= 10V, IC= 20mA,f=100MHz
VCB= 5 V, f=1MHz
*Pulse width 380µs, Duty Cycle
2%
Classification of hFE4
Rank
Range
Q
100~210
R
190~300
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2



SeCoS PZT4401
Elektronische Bauelemente
Characteristics Curve
PZT4401
NPN Transistor
Epitaxial Planar Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2







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