SMD Type
Transistors
NPN Transistors
PZTA42 (KZTA42)
SOT-223
6.50±0.2 3.00±0.1
10
Unit:mm
■ Features
● High brea...
SMD Type
Transistors
NPN Transistors
PZTA42 (KZTA42)
SOT-223
6.50±0.2 3.00±0.1
10
Unit:mm
■ Features
● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to PZTA92
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg
4
7.0±0.3 3.50±0.2
1.80 (max) 0.02 ~ 0.1
123
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250 Gauge Plane
1.Base 2.Collector 3.Emitter 4.Collector
Rating 300 300 6 200 500 1 150
-55 to 150
Unit V
mA W ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage
DC current gain
Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 1 mA, IB= 0
VEBO IE= 100μA, IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=20 mA, IB=2mA
VBE(sat) IC=20 mA, IB=2mA
hFE(1) VCE= 10V, IC= 1mA
hFE(2) VCE= 10V, IC= 10mA
hFE(3) VCE= 10V, IC= 30mA
Cob VCB= 20V, IE= 0,f=1MHz
fT VCE= 20V, IC= 10mA,f=100MHz
Min Typ Max Unit 300 300 V
6 100 nA 100 0.5 V 0.9
25 40 40
3 pF 50 MHz
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