BDW94B

Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emitter 4. Collector (Case) A B C D E F G H I J K L M O Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Base Current Total Power Dissipation at TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics 14.68 15.31 9.78 10.42 5.01 6.52 13.06 14.62 3.57 4.07 2.42 3.66 1.12 1.36 0.72 0.96 4.22 4.98 1.14 1.38 2.20 2.97 0.33 0.55 2.48 2.98 3.70 3.9 Dimensions : Millimetres NPN BDW93B BDW93C PNP BDW94B BDW94C 12 A Darlington Complementary Silicon Power Transistors 45 to 100 V 80 W TO-220 Symbol VCEO VCBO VEBO IC ICM IB PD TJ, TSTG BDW93B BDW94B BDW93C BDW94C 80 100 5 12 15 0.2 80 0.64 -65 to +150 Unit V A W W / °C °C Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 1.56 Unit °C / W www.element14.com www.farnell.com www.newark.com Page <1> 22/06/12 V1.1 Darlington Transistors BDW93, BDW94 Series Figure1 Power Derating PD, Power Dissipation (W) TC, Temp...