Darlington Transistors. BDW93B Datasheet

BDW93B Transistors. Datasheet pdf. Equivalent

BDW93B Datasheet
Recommendation BDW93B Datasheet
Part BDW93B
Description Darlington Transistors
Feature BDW93B; Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low.
Manufacture Multicomp
Datasheet
Download BDW93B Datasheet




Multicomp BDW93B
Darlington Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching applications
Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B
100 V (Minimum) - BDW93C, BDW94C
Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
Monolithic construction with built-in-base-emitter shunt resistor
Dimension Minimum Maximum
Pin : 1. Base
2. Collector
3. Emitter
4. Collector (Case)
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Thermal Characteristics
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.20 2.97
0.33 0.55
2.48 2.98
3.70 3.9
Dimensions : Millimetres
NPN
BDW93B
BDW93C
PNP
BDW94B
BDW94C
12 A
Darlington
Complementary Silicon
Power Transistors
45 to 100 V
80 W
TO-220
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
PD
TJ, TSTG
BDW93B
BDW94B
BDW93C
BDW94C
80 100
5
12
15
0.2
80
0.64
-65 to +150
Unit
V
A
W
W / °C
°C
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.56
Unit
°C / W
www.element14.com
www.farnell.com
www.newark.com
Page <1>
22/06/12 V1.1



Multicomp BDW93B
Darlington Transistors
BDW93, BDW94 Series
Figure1 Power Derating
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
OFF Characteristics
Collector-Emitter Sustaining Voltage (1) BDW93B, BDW94B
(IC = 100 mA, IB = 0)
BDW93C, BDW94C
Collector Cut off Current
(VCE = 80 V, IB = 0)
Collector-Base Cut off Current
(VCB = Rated VCB, IE = 0)
Emitter-Base Cut off Current
(VEB = 5 V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 3 A, VCE = 3 V)
(IC = 5 A, VCE = 3 V)
(IC = 10 A, VCE = 3 V)
Collector-Emitter Saturation Voltage
(IC = 5 A, IB = 20 mA)
(IC = 10 A, IB = 100 mA)
Base-Emitter Saturation Voltage V
(IC = 5 A, IB = 20 mA)
(IC = 10 A, IB = 100 mA)
BDW93B, BDW94B
BDW93C, BDW94C
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%
Symbol
VCEO (sus)
ICEO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
Minimum
80
100
-
-
-
1,000
750
100
-
-
Maximum
-
1
100
2
20,000
2
3
2.5
4
Unit
V
mA
µA
mA
-
V
www.element14.com
www.farnell.com
www.newark.com
Page <2>
22/06/12 V1.1



Multicomp BDW93B
Darlington Transistors
BDW93, BDW94 Series
BDW93 Series NPN
BDW94 Series PNP
NPN BDW93B and C
IC - Vbe
NPN BDW94B and C
IC - Vbe
VBE, Base - Emitter Voltage (V)
Switching Time
VBE, Base - Emitter Voltage (V)
Switching Time
IC, Collector Current (A)
www.element14.com
www.farnell.com
www.newark.com
Page <3>
IC, Collector Current (A)
22/06/12 V1.1







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