DARLINGTON TRANSISTORS. BDW93B Datasheet

BDW93B TRANSISTORS. Datasheet pdf. Equivalent

BDW93B Datasheet
Recommendation BDW93B Datasheet
Part BDW93B
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Feature BDW93B; BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFER.
Manufacture SGS-THOMSON
Datasheet
Download BDW93B Datasheet




SGS-THOMSON BDW93B
BDW93B/BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The BDW93B, and BDW93C are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in Jedec TO-220 plastic package. They
are intented for use in power linear and switching
applications.
The complementary PNP types are the BDW94B
and BDW94C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symb ol
P ara me t er
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC Collect or Current
ICM Collect or Peak Current
IB Base Current
Ptot T otal Dissipation at Tc 25 oC
Ts tg Storage T emperature
Tj Max. Operating Junction T emperature
For PNP types voltage and current values are negative.
October 1995
NPN
PNP
V alu e
BDW93B
B DW 9 3C
BDW94B
B DW 9 4C
80 100
80 100
12
15
0.2
80
-65 to 150
150
Unit
V
V
A
A
A
W
oC
oC
1/4



SGS-THOMSON BDW93B
BDW93B/BDW93C/BDW94B/BDW94C
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
1. 56
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
T est Con ditio ns
ICBO
Collector Cut-off
Current (IE = 0)
for BDW93B/94B
for BDW93C/94C
Tcase = 150 oC
for BDW93B/94B
for BDW93C/94C
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BDW93B/94B
for BDW93C/94C
VCB = 80 V
VCB = 100 V
IEBO
Emitter Cut- off Current
(IC = 0)
VCEO(sus)Collector-Emitt er
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitt er
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
for BDW93B/94B
for BDW93C/94C
IB = 20 mA
IB = 100 mA
VBE(sat)Base-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
hFEDC Current Gain
IC = 3 A
IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
Voltage
IF = 10 A
hfe Small Signal Current IC = 1 A
: Gain
f = 1 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 10 V
Min.
80
100
1000
750
100
20
T yp.
1.3
1.8
Max.
100
100
5
5
1
1
2
2
3
2 .5
4
20K
2
4
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
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SGS-THOMSON BDW93B
DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
BDW93B/BDW93C/BDW94B/BDW94C
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
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