BDW93B

BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDW94B and BDW94C respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symb ol P ara me t er VCBO Collect or-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) IC Collect or Current ICM Collect or Peak Current IB Base Current Ptot T otal Dissipation at Tc ≤ 25 oC Ts tg Storage T emperature Tj Max. Operating Junction T emperature For PNP types voltage and current values are negative. October 1995 NPN PNP V alu e BDW93B B DW 9 3C BDW94B B DW 9 4C 80 100 80 100 12 15 0.2 80 -65 to 150 150 Unit V V A A A W oC oC 1/4 BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA Rthj-ca se Thermal Resistance Junction-case 1. 56 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter T est Con ditio ns ICBO Collector Cut-off Current (IE = 0) for BDW93B/94B for BDW93C/94C Tcase = 150 oC for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V VCB = 80 V VCB = 100 V ICEO Collector Cut-off Current (IB = 0) for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V IEBO Emitter Cut- off Cu...