BDW93A

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDW93/A/B/C DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW94/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDW93 VCBO Collector-base voltage BDW93A BDW93B BDW93C BDW93 VCEO BDW93A Collector-emitter voltage BDW93B BDW93C VEBO IC ICM Emitter-base voltage Collector current-DC Collector current-Pulse IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 45 60 80 100 45 60 80 100 5 12 15 0.2 80 150 -65~150 UNIT V V V A A A W MAX 1.5 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW93 VCEO(SUS) Collector-emitter sustaining voltage BDW93A BDW93B IC=0.1A, IB=0 BDW93C VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF-1 VF-2 Collector-emitter saturation voltage IC=5A ,IB=20mA Collector-emitter saturation voltage IC=10A ,IB=0.1A Base-emitter saturation voltage IC=5A ,IB=20mA Base-emitter saturation voltage IC=10A ,IB=0.1A BDW93 VCB=45V, IE=0 Collector cut-off current BDW93...