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2SD1351 Dataheets PDF



Part Number 2SD1351
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description NPN Complementary Silicon Power Transistors
Datasheet 2SD1351 Datasheet2SD1351 Datasheet (PDF)

2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications. TO-220C COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 23 1 ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Volt.

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2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications. TO-220C COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 23 1 ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter l Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 60 V 7V 3.0 A 0.5 A 30 W 150 oC -55~150 oC 9.90±0.20 φ3.60±0.20 4.50±0.20 1.30±0.20 6.50±0.20 15.70±0.20 2.80±0.20 9.19±0.20 3.02±0.20 13.08±0.20 1.27±0.20 1.52±0.20 2.40±0.20 2.54typ 2.54typ 0.80±0.20 TO-220C Package Dimension 0.50±0.20 Dimensions in Millimeters ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) VBE(sat) fT VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=5V, IC=0.5A VCE=4V, IC=3.0A IC=2A,IB=200mA VCE=5V,IC=0.5A VCE=5V,IC=500mA Min. — — 60 60 25 — — 3.0 Typ. — — — — — — — — Max. Unit 0.1 mA 0.1 mA —V 300 — 1.0 V 1.0 V — MHz Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/1 http://www.thinkisemi.com/ .


MLB-321611-0500PP 2SD1351 2SD1351


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