Power Transistors. 2SD1351 Datasheet

2SD1351 Transistors. Datasheet pdf. Equivalent

2SD1351 Datasheet
Recommendation 2SD1351 Datasheet
Part 2SD1351
Description NPN Complementary Silicon Power Transistors
Feature 2SD1351; 2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATU.
Manufacture Thinki Semiconductor
Datasheet
Download 2SD1351 Datasheet




Thinki Semiconductor 2SD1351
2SD1351
®
2SD1351
Pb
Pb Free Plating Product
NPN Complementary Silicon Power Transistors
FEATURES
z Complements the 2SB988.
z Wide Safe Operationg Area.
z Fast Switching Speed.
z Wide ASO.
APPLICATIONS
z Power Amplifier Applications.
z Vertical Output Applications.
z Switching Applications.
TO-220C
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
23
1
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l Value Unit
Collector-Base Voltage
VCBO 60 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
60 V
7V
3.0 A
0.5 A
30 W
150 oC
-55~150 oC
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
2.54typ
2.54typ
0.80±0.20
TO-220C Package Dimension
0.50±0.20
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO
IEBO
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=5V, IC=0.5A
VCE=4V, IC=3.0A
IC=2A,IB=200mA
VCE=5V,IC=0.5A
VCE=5V,IC=500mA
Min.
60
60
25
3.0
Typ.
Max. Unit
0.1 mA
0.1 mA
V
300
1.0 V
1.0 V
MHz
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
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