Document
2SD1351
®
2SD1351
Pb
Pb Free Plating Product
NPN Complementary Silicon Power Transistors
FEATURES
z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO.
APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications.
TO-220C
COLLECTOR 2
BASE 1
3 EMITTER
1. BASE 2. COLLECTOR 3. EMITTER
23 1
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l Value Unit
Collector-Base Voltage
VCBO 60 V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO VEBO
IC IB Ptot Tj Tstg
60 V 7V 3.0 A 0.5 A 30 W 150 oC -55~150 oC
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
6.50±0.20
15.70±0.20 2.80±0.20
9.19±0.20
3.02±0.20
13.08±0.20
1.27±0.20 1.52±0.20
2.40±0.20
2.54typ 2.54typ
0.80±0.20
TO-220C Package Dimension
0.50±0.20 Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product
ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) VBE(sat) fT
VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=5V, IC=0.5A VCE=4V, IC=3.0A IC=2A,IB=200mA VCE=5V,IC=0.5A VCE=5V,IC=500mA
Min. — — 60 60 25 — — 3.0
Typ. — — — — — — — —
Max. Unit 0.1 mA 0.1 mA —V 300 — 1.0 V 1.0 V — MHz
Rev.04 © 2006 Thinki Semiconductor Co.,Ltd.
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