Barrier Rectifiers. CDBMT160-HF Datasheet

CDBMT160-HF Rectifiers. Datasheet pdf. Equivalent

CDBMT160-HF Datasheet
Recommendation CDBMT160-HF Datasheet
Part CDBMT160-HF
Description SMD Schottky Barrier Rectifiers
Feature CDBMT160-HF; Low Profile SMD Schottky Barrier Rectifiers CDBMT120-HF Thru. CDBMT1150-HF Reverse Voltage: 20 to .
Manufacture Comchip
Datasheet
Download CDBMT160-HF Datasheet




Comchip CDBMT160-HF
Low Profile SMD Schottky Barrier Rectifiers
CDBMT120-HF Thru. CDBMT1150-HF
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
SOD-123H
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Low power loss,high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.040(1.0)
0.024(0.6)
Mechanical data
0.031(0.8) Typ.
0.031(0.8) Typ.
-Epoxy: UL94-V0 rated flame retardant.
-Case: Molded plastic, SOD-123H/MINI SMA
-Terminals: Solderable per MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting Position: any
-Weight: 0.011 grams approx.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25 OC unless otherwise noted)
Parameter
Symbol CDBMT
120-HF
CDBMT
130-HF
CDBMT CDBMT
140-HF 150-HF
CDBMT
160-HF
CDBMT CDBMT CDBMT
180-HF 1100-HF 1150-HF
Unit
Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80 100 150 V
Continuous reverse voltage
VR 20 30 40 50 60 80 100 150 V
RMS voltage
VRMS
14
21
28
35
42
56
70 105 V
Forward rectified current
IO
1.0 A
Maximum forward voltage
@ IF=1.0A
VF 0.50
0.70 0.85 0.92 V
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC method)
IFSM
VR=VRRM TJ=25°C
Max.Reverse current
VR=VRRM TJ=100°C
Typ. Thermal resistance
(Junction to ambient)
IR
RθJA
Typ. Diode Junction capacitance (Note 1)
CJ
25 A
0.5
mA
10
O
98 C/W
120 PF
Operating temperature
TJ
Storage temperature range
TSTG
Note : 1. F=1MHz and applied 4V DC reverse voltage
-55 to +125
-55 to +150
-65 to +175
OC
OC
QW-JB025
Comchip Technology CO., LTD.
REV: A
Page 1



Comchip CDBMT160-HF
Low Profile SMD Schottky Barrier Rectifiers
Rating and Characteristic Curves (CDBMT120-HF Thru. CDBMT1150-HF)
Fig.1- Typical Forward Current
Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
0
20 40 60 80 100 120 140 160
TA, Ambient Temperature, (°C)
Fig.2 - Typical Forward Characteristics
100
10
1
CDBMCTD12B0MC-HTDF1B~5M104-TH01-FH8~0F1-H60F-~H1F150-HF
0.1
0.01
0.1
TJ=25°C
Pulse Width 300US
1% Duty Cycle
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VF, Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive
Forward Surge Current
25
TJ=25 OC
8.3ms single half sine
wave, JEDEC method
20
15
10
5
0
1 10 100
Number of Cycles at 60Hz
Fig.4 - Typical Junction Capacitance
350
300
250
200
150
100
50
0
0.01 0.1 1 10 100
VR, Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
100
10
1
TJ=75 OC
0.1
TJ=25 OC
0.01
0
40 80 120 160 200
Percent of Rated Peak Reverse Voltage, (%)
QW-JB025
Comchip Technology CO., LTD.
REV: A
Page 2



Comchip CDBMT160-HF
Low Profile SMD Schottky Barrier Rectifiers
Reel Taping Specification
P0 d
P1
Index hole
E
T
F
BW
PA
C
D2 D1 D
W1
Trailer
Device
Leader
....... .......
....... .......
End ....... ....... ....... .......
10 pitches (min)
10 pitches (min)
Start
Direction of Feed
SOD-123H
SYMBOL
(mm)
(inch)
ABC d D
2.00 ± 0.10 3.85 ± 0.10 1.10 ± 0.10 1.50 ± 0.10 178 ± 2.00
0.079 ± 0.004 0.152 ± 0.004 0.043 ± 0.004 0.059 ± 0.004 7.00 ± 0.079
D1
62.0 MIN.
2.440 MIN.
D2
13.0 ± 0.50
0.512 ± 0.020
SOD-123H
SYMBOL
(mm)
(inch)
E
1.75 ± 0.10
0.069 ± 0.004
F
3.50 ± 0.10
0.138 ± 0.004
P
4.00 ± 0.10
0.157 ± 0.004
P0
4.00 ± 0.10
0.157 ± 0.004
P1 T
2.00 ± 0.10 0.23 ± 0.10
0.079 ± 0.004 0.009 ± 0.004
W
8.00 ± 0.30
0.315 ± 0.012
W1
11.40 ± 1.0
0.449 ± 0.039
QW-JB025
Comchip Technology CO., LTD.
REV: A
Page 3







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