Barrier Rectifiers. CDBMT230L-G Datasheet

CDBMT230L-G Rectifiers. Datasheet pdf. Equivalent

CDBMT230L-G Datasheet
Recommendation CDBMT230L-G Datasheet
Part CDBMT230L-G
Description SMD Schottky Barrier Rectifiers
Feature CDBMT230L-G; Low VF SMD Schottky Barrier Rectifiers CDBMT220L-G Thru. CDBMT240L-G Reverse Voltage: 20 to 40 Volts.
Manufacture Comchip
Datasheet
Download CDBMT230L-G Datasheet




Comchip CDBMT230L-G
Low VF SMD Schottky Barrier Rectifiers
CDBMT220L-G Thru. CDBMT240L-G
Reverse Voltage: 20 to 40 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile surface mounted application in order
to optimize board space.
-Low power loss, high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
Mechanical data
-Case: Mini SMA/SOD-123H , molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Approx. weight: 0.011 grams
SOD-123H
0.018(0.45)
0.006(0.15)
0.146(3.7)
0.130(3.3)
0.006(0.15)
0.002(0.05)
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.040(1.0)
0.024(0.6)
0.035(0.9)
0.028(0.7)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol CDBMT220L-G CDBMT230L-G CDBMT240L-G Units
Max. Repetitive Peak Reverse Voltage
VRRM
20
30
40 V
Continuous Reverse Voltage
VR 20
30
40 V
Max. RMS Voltage
VRMS
14
21
28 V
Max. Forward Surge Current
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
50 A
Max. Forward Rectified Current (Fig.2)
IO
2.0 A
Max. Forward Voltage @IF=2.0A
VF 0.38
0.40
0.40 V
Max. Reverse Current @TA=25°C
Typ. Thermal Resistance
Junction to Ambient
Typ. Diode Junction Capacitance
f=1MHz and applied 4V DC reverse voltage
Storage Temperature
IR
RθJA
CJ
TSTG
1.0
70
160
-65 to +175
mA
°C/W
pF
°C
Operating Temperature
TJ
-55 to +100
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BL012
Comchip Technology CO., LTD.
REV:B
Page 1



Comchip CDBMT230L-G
Low VF SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBMT220L-G thru CDBMT240L-G)
Fig.1 - Typical Forward Characteristics
100
10 CDCBDMBTM22T02L3-0GL-G~240L-G
1
0.1
0.01
0.1
TJ=25°C
Pulse width=300μs
1% Duty cycle
0.3 0.5 0.7 0.9 1.1 1.3 1.5
Forward Voltage, (V)
Fig.3 - Typical Revrse Characteristics
1000
100
10
TJ=75 OC
1
TJ=25 OC
0.1
0 20 40 60 80 100 120 140
Percentage of Rated Peak Reverse Voltage, (%)
Fig.2 - Typical Forward Current
Derating Curve
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150 175
Lead Temperature, (°C)
Fig.4 - Maximum Non-repetitive
Forward Surge Current
60
TJ=25 OC
8.3ms single half sine
50 wave, JEDEC method
40
30
TJ=25°C
20
10
0
1 10 100
Number of cycles at 60Hz
Fig.5 - Typical Junction Capacitance
350
300
250
200
150
100
50
0
0.01
0.1 1 10
Reverse Voltage, (V)
100
QW-BL012
Comchip Technology CO., LTD.
REV:B
Page 2



Comchip CDBMT230L-G
SMD Schottky Barrier Rectifiers
Reel Taping Specification
P0 d
P1 E
Index hole
F
BW
PA
T
C
D2 D1 D
W1
Trailer
Device
Leader
....... .......
....... .......
End ....... ....... ....... .......
10 pitches (min)
10 pitches (min)
Start
Direction of Feed
SOD-123H
SYMBOL
(mm)
(inch)
ABCdD
2.00 ± 0.10 3.85 ± 0.10 1.10 ± 0.10 1.50 ± 0.10 178.00 ± 2.00
0.079 ± 0.004 0.152 ± 0.004 0.043 ± 0.004 0.059 ± 0.004 7.007 ± 0.079
D1
62.00 (min)
2.441 (min)
D2
13.00 ± 0.50
0.512 ± 0.020
SOD-123H
SYMBOL
(mm)
(inch)
E F P P0 P1
1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10
0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004
T
0.23 ± 0.10
0.009 ± 0.04
W W1
8.00 ± 0.30 11.40 ± 1.00
0.315 ± 0.012 0.449 ± 0.039
QW-BL012
Comchip Technology CO., LTD.
REV:B
Page 3







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