Barrier Diode. CDBS120-HF Datasheet

CDBS120-HF Diode. Datasheet pdf. Equivalent

CDBS120-HF Datasheet
Recommendation CDBS120-HF Datasheet
Part CDBS120-HF
Description SMD Schottky Barrier Diode
Feature CDBS120-HF; SMD Schottky Barrier Diode CDBS120-HF Thru. CDBS160-HF Forward current: 1.0A Reverse voltage: 20 .
Manufacture Comchip
Datasheet
Download CDBS120-HF Datasheet




Comchip CDBS120-HF
SMD Schottky Barrier Diode
CDBS120-HF Thru. CDBS160-HF
Forward current: 1.0A
Reverse voltage: 20 to 60V
RoHS Device
0805
Halogen Free
0.083 (2.10)
0.075 (1.90)
Features
-Low power loss, High efficiency.
0.055 (1.40)
0.047 (1.20)
-High current capability, low VF
-Plastic package has underwriters laboratory
flammability classification 94V-0.
0.040(1.00)
Typ.
R 0.011(0.275)
Mechanical Data
-Case: Packed with FRP substrate and
epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
-Polarity: Laser cathode band marking.
.-Weight: 0.005 grams (approx).
0.022 (0.55)
0.014 (0.35)
0.039 (1.00)
0.028 (0.70)
0.022(0.55)
0.014(0.35)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Parameter
Symbol
CDBS120-HF CDBS140-HF CDBS160-HF Unit
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
@8.3ms single half sine-wave
VRM 20 40 60 V
IF(AV)
1A
IFSM 10 A
Operating junction temperature range
TJ
-55 to +125
-55 to +150
°C
Storage temperature
TSTG
-55 ~ +150
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions Type
Symbol
Min.
Typ.
Max.
Forward voltage (Note1)
IF=0.1A
IF=0.5A
IF=1.0A
IF=0.1A
IF=0.5A
IF=1.0A
IF=0.1A
IF=0.5A
IF=1.0A
CDBS120-HF
CDBS140-HF
VF
CDBS160-HF
- 0.32 -
- 0.39 -
-
0.42
0.45
- 0.33 -
- 0.40 -
-
0.47
0.50
- 0.38 -
- 0.50 -
-
0.62
0.65
Reverse peak reverse current (Note1) VR=Max.VRRM, Ta=25°C
IRRM
-
0.028
0.20
Junction capacitance
VR=4V, f=1.0MHz
Cj - 115 -
Thermal resistance
Junction to ambient (Note 2)
RΘJA
-
120
-
Junction to lead (Note 2)
RΘJL
-
28
-
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
QW-JB059
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
Unit
V
mA
pF
ºC/W
ºC/W
REV:A
Page 1



Comchip CDBS120-HF
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBS120-HF Thru. CDBS160-HF)
Fig.1- Typical Forward Current Derating Curve
1.0
0.5
Resistive or inductive load
P.C.B Mounted on 0.2*0.2”(5.0*5.0mm)
Copper pad areas
0
0 25 50 75 100 125 150 175
Case Temperature, (°C)
Fig.2- Maximum Non-Repetitive Peak
Forward Surge Current
12
8.3ms Single Half Sine-Wave
(JEDEC Method)
10
8
6
4
2
0
1 10 100
Number of Cycles at 60Hz
Fig.3- Typical Instantaneous Forward
Characteristics
10
1.00
0.10
0.01
0.001
0
CDBS120-HF
CDBS140-HF
CDBS160-HF
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous forward voltage, (V)
Fig.4- Typical Reverse Characteristics
100
10
TJ=100°C
1.0
0.1
0.01
TJ=25 OC
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage, (%)
Fig.5- Typical Junction Capacitance
400
TJ=25 OC
f=1MHz
Vsig=50mVP-P
100
10
0.1
QW-JB059
1 10
Reverse Voltage, (V)
100
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
Page 2



Comchip CDBS120-HF
SMD Schottky Barrier Diode
Reel Taping Specification
P0 d
P1 E
Index hole
F
BW
PA
T
C
D2 D1 D
W1
Trailer
Device
Leader
....... .......
....... .......
End ....... ....... ....... .......
10 pitches (min)
10 pitches (min)
Start
Direction of Feed
0805
0805
SYMBOL
(mm)
(inch)
A B C d D D1 D2
1.45 ± 0.10 2.25 ± 0.10 1.10 ± 0.10 1.50 ± 0.10 178 ± 2.00 60 ± 0.50 13.50 ± 0.50
0.057 ± 0.004 0.089± 0.004 0.043 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.362 ± 0.020 0.531± 0.020
SYMBOL
(mm)
(inch)
E F P P0 P1 W W1
1.75 ± 0.10 3.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 ± 0.30 9.0 ± 0.50
0.069 ± 0.004 0.138 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.012 0.354 ± 0.02
QW-JB059
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
Page 3







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