Power Transistor. MAGX-000035-01500S Datasheet

MAGX-000035-01500S Transistor. Datasheet pdf. Equivalent

MAGX-000035-01500S Datasheet
Recommendation MAGX-000035-01500S Datasheet
Part MAGX-000035-01500S
Description Power Transistor
Feature MAGX-000035-01500S; MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Fea.
Manufacture MA-COM
Datasheet
Download MAGX-000035-01500S Datasheet




MA-COM MAGX-000035-01500S
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
 RoHS* Compliant
 +50V Typical Operation
 MTTF = 600 years (TJ < 200°C)
Primary Applications
 Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
 Air Traffic Control Radar - Commercial
 Weather Radar - Commercial
 Military Radar - Military
 Public Radio
 Industrial, Scientific and Medical
 SATCOM
 Instrumentation
Description
The MAGX-000035-01500X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
Rev. V1
MAGX-000035-015000 (Flanged)
MAGX-000035-01500S (Flangeless)
Ordering Information
Part Number
Description
MAGX-000035-015000 Flanged, Bulk Packaging
MAGX-000035-01500S Flangeless, Bulk Packaging
MAGX-L20035-015000
MAGX-L20035-01500S
Sample Board
(1.2 - 1.4 GHz, Flanged)
Sample Board
(1.2 - 1.4 GHz, Flangeless)
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAGX-000035-01500S
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Electrical Specifications1: Freq. = 1.2 - 1.4 GHz, TA = 25°C
Parameter
Test Conditions
Symbol
RF Functional Tests: VDD = 50 V, IDQ = 15 mA, 1 ms Pulse, 10% Duty
Output Power
PIN= 0.5 W
POUT
Power Gain
Drain Efficiency
PIN= 0.5 W
PIN= 0.5 W
GP
ηD
Droop
PIN= 0.5 W
Droop
Load Mismatch Stability
Load Mismatch Tolerance
PIN= 0.5 W
PIN= 0.5 W
VSWR-S
VSWR-T
Min.
15.0
14.8
55
-
-
-
Typ.
17.7
15.5
63
0.1
5:1
10:1
Max. Units
-W
- dB
-%
0.4 dB
--
--
Electrical Characteristics: TA = 25°C
Parameter
Test Conditions
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 2 mA
VDS = 5 V, ID = 500 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
Symbol Min.
IDS
VGS (TH)
GM
-
-5
0.35
CISS
COSS
CRSS
-
-
-
Typ.
-
-3
-
4.4
1.9
0.2
Max. Units
750 µA
-2 V
-S
- pF
- pF
- pF
Correct Device Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (+50V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
1. Electrical Specifications measured in MACOM RF evaluation board.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAGX-000035-01500S
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Absolute Maximum Ratings2,3,4
Parameter
Input Power
Drain Supply Voltage, VDD
Gate Supply Voltage, VGG
Absolute Max.
PIN (nominal) + 3 dB
+65 V
-8 V to 0 V
Supply Current, IDD
800 mA
Power Dissipation (PAVG), Pulsed @ 85°C
MTTF (TJ<200°C)
Junction Temperature5
10.3 W
600 years
200°C
Operating Temperature
-40°C to +95°C
Storage Temperature
-65°C to +150°C
Mounting Temperature
See solder reflow profile
ESD Min. - Charged Device Model (CDM)
150 V
ESD Min. - Human Body Model (HBM)
500 V
2. Operation of this device above any one of these parameters may cause permanent damage.
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
4. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical transient thermal resistances:
1 ms pulse, 10% duty cycle, ӨJC = 5.0°C/W
For TC = 85°C,
TJ = 132°C @ 50 V, 520 mA-pk, POUT = 17.0 W, PIN = 0.5 W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298







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