Mode MOSFET. SM3119NAU Datasheet

SM3119NAU MOSFET. Datasheet pdf. Equivalent

SM3119NAU Datasheet
Recommendation SM3119NAU Datasheet
Part SM3119NAU
Description N-Channel Enhancement Mode MOSFET
Feature SM3119NAU; SM3119NAU Features · 30V/50A, RDS(ON)=10.5mW (max.) @ VGS=10V RDS(ON)=14.5mW (max.) @ VGS=4.5V · Rel.
Manufacture Sinopower
Datasheet
Download SM3119NAU Datasheet




Sinopower SM3119NAU
SM3119NAU
Features
· 30V/50A,
RDS(ON)=10.5mW (max.) @ VGS=10V
RDS(ON)=14.5mW (max.) @ VGS=4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of TO-252-3
D
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM3119NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM3119NA U :
SM3119NA
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.7 - February, 2014
1
www.sinopowersemi.com



Sinopower SM3119NAU
SM3119NAU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TST G
IS
IDP
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJ A
IAS b
EAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
t £ 10s
Steady State
L=0.5mH
L=0.5mH
30
±20
150
-55 to 150
30
120
80
50*
35
50
20
2.5
20
50
14
50
V
°C
°C
A
A
A
W
°C/W
°C/W
A
mJ
Note a* Current limited by bond wire.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.7 - February, 2014
2
www.sinopowersemi.com



Sinopower SM3119NAU
SM3119NAU
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
BVDSSt
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD c
trr
Diode Forward Voltage
Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=250mA
VGS=0V, ID(aval)=14A
Tcase=25°C, ttransient=100ns
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
TJ=125°C
VGS=4.5V, IDS=15A
VDS=5V, IDS=15A
30
34
-
-
1.5
-
-
-
-
-
ISD=30A, VGS=0V
IDS=30A, dlSD/dt=100A/ms
-
-
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
2.0
630
105
55
-
-
-
-
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=30A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
IDS=30A
Qgd Gate-Drain Charge
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
-
-
-
-
-
Typ.
-
-
-
-
1.9
-
8.5
12.7
12
40
0.9
20
12
8
11
2.5
760
128
72
8
10
24
4.6
7
14
1.4
2.8
3
Max. Unit
-V
-V
1
30
2.5
±100
10.5
-
14.5
-
mA
V
nA
mW
S
1.1 V
-
- ns
-
- nC
3.4 W
910
155 pF
95
16
19
ns
43
8.8
9
17
1.9 nC
3.3
3.5
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.7 - February, 2014
3
www.sinopowersemi.com







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