Recovery Diode. 2CR202ANLH Datasheet

2CR202ANLH Diode. Datasheet pdf. Equivalent

2CR202ANLH Datasheet
Recommendation 2CR202ANLH Datasheet
Part 2CR202ANLH
Description Super Fast Recovery Diode
Feature 2CR202ANLH; 2CR202ANLH Super Fast Recovery Diode Features: • Very Low Forward Voltage • Very Fast Switching Tim.
Manufacture IPS
Datasheet
Download 2CR202ANLH Datasheet




IPS 2CR202ANLH
2CR202ANLH
Super Fast Recovery Diode
Features:
• Very Low Forward Voltage
• Very Fast Switching Time
• Low Power Loss
• High Reliability
• High Current Capability
• High Surge Current Capability
Applications:
The device is mainly used in middle voltage,
high frequency inventor and in power switch
circuit of SMPS. .
Ordering Information
PART NUMBER
PACKAGE
2CR202ANLH
TO-3P(N)
BRAND
2CR202ANLH
Pb Lead Free Package and Finish
H F Halogen Free
VRRM
IF(Average)
trr
200V 20A 25nS
A
C
A
TO-3P(N)
Anode
Cathode
Anode
Common Cathode
Equivalent Circuit
Absolute Maximum Ratings Tc= 25unless otherwise specified
Maximum
Symbol
Parameter
2CR202ANLH
VRRM
Maximum Recurrent Peak Reverse Voltage
200
VRWM
Maximum Peak Working Reverse Voltage
200
VR Maximum DC Reverse Voltage
200
IF(AVERAGE)
IFSM
Maximum Average Forward Rectified Current
Max.Peak Forward One Cycle Non-Repetitive Surge
Current (10ms Single half sine-wave )
20
100
TJ Operation Junction
150
TSTG
Storage Temperature Range
-40~150
Caution: Stresses greater than those listed in “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Units
V
A
A
Thermal Resistance
Symbol Parameter
RθJC
Junction-to-Case
Maximum
2CR202ANLH
1.5
Units
/W
Test Condition
Water cooled heat sink, PD adjusted for a
peak junction temperature of +150.
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 4
2CR202ANLH REV. A. Nov. 2009



IPS 2CR202ANLH
Electrical CharacteristicsTc= 25unless otherwise specified):
Symbol Parameter
Rating
Min. Typ. Max.
VF Instantaneous Forward Voltage
-- -- 0.95
-- -- 1.00
IR
Instantaneous DC Reverse Leakage Current
--
-- 10
trr Reverse Recovery Time
-- -- 25
CT Max. Junction Capacitance
-- -- 260
Units
V
uA
nS
pF
Test Conditions
IF=10A(Note1)
IF=20A(Note1)
VR =200V
IF =0.5A, IR =1A,
IREC =0.25A
F=1MHz,VR=5VDC
Notes:
*1. Pulse width300us; duty cycle2%.
©2009 InPower Semiconductor Co., Ltd.
Page 2 of 4
2CR202ANLH REV. A. Nov. 2009



IPS 2CR202ANLH
Package
TO-3P(N) , Green material, the information as follow:
Part’s Name
Limit
Lead Frame
Molding Compound
Chip
Wire Bonding
Solder
Pb
0.1%
×
Hazardous
Hg
0.1%
Cd
0.01%
○○
○○
○○
○○
○○
Substance
Cr(VI)
0.1%
PBB
0.1%
○○
○○
○○
○○
○○
PBDE
0.1%
Note
Means the hazardous material is under the criterion of SJ/T11363-2006.
×Means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within
the allowed range of Eurogroup’s RoHS.
©2009 InPower Semiconductor Co., Ltd.
Page 3 of 4
2CR202ANLH REV. A. Mar. 2009







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