voltage rectifier. STTH30W03C Datasheet

STTH30W03C rectifier. Datasheet pdf. Equivalent

STTH30W03C Datasheet
Recommendation STTH30W03C Datasheet
Part STTH30W03C
Description Turbo 2 ultrafast high voltage rectifier
Feature STTH30W03C; STTH30W03C Turbo 2 ultrafast high voltage rectifier Features ■ Ultrafast switching ■ Low reverse r.
Manufacture STMicroelectronics
Datasheet
Download STTH30W03C Datasheet




STMicroelectronics STTH30W03C
STTH30W03C
Turbo 2 ultrafast high voltage rectifier
Features
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching losses
ECOPACK®2 compliant component
Description
The STTH30W03C uses ST Turbo 2 300 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
Datasheet production data
A1
K
A2
A2
K
A1
TO-247
STTH30W03CW
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
trr (typ)
Tj
VF (typ)
2 x 15 A
300 V
20 ns
175 °C
0.90 V
May 2012
This is information on a product in full production.
Doc ID 023116 Rev 1
1/8
www.st.com
8



STMicroelectronics STTH30W03C
Characteristics
1 Characteristics
STTH30W03C
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Tc = 140 °C Per diode
Tc = 130 °C Per device
tp = 10 ms sinusoidal
Maximum operating junction temperature
300
30
15
30
150
-65 to + 175
+ 175
V
A
A
A
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Per diode
Total
Rth(c) Coupling
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
1.7
1.0
0.3
°C / W
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ Max. Unit
IR (1)
VF (2)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
Tj = 25 °C
Forward voltage drop
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 15A
IF = 30 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.0167 IF2(RMS)
10
10 100
1.40
0.90 1.10
1.6
1.1 1.35
µA
V
2/8 Doc ID 023116 Rev 1



STMicroelectronics STTH30W03C
STTH30W03C
Characteristics
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
IRM
QRR
Sfactor
trr
tfr
VFP
Reverse recovery current
Reverse recovery charge
Softness factor
Reverse recovery time
Forward recovery time
Forward recovery voltage
Tj = 125 °C
IF = 15 A, VR = 200 V
dIF/dt = -200 A/µs
Tj = 25 °C
Tj = 25 °C
Tj = 25 °C
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
IF = 15 A, VFR = 1.2 V
dIF/dt = 100 A/µs
Min. Typ Max. Unit
79
160
0.3
A
nC
20 25 ns
230
2.0 3.0
ns
V
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Forward voltage drop versus
forward current (per diode)
PF(AV)(W)
24
20
16
12
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5 δ = 1
IFM(A)
1000.0
100.0
Tj=150°C
(Maximum values)
Tj=150 °C
(Typical values)
10.0
Tj = 25 °C
(Maximum values)
8
T
4
δ = tp/T tp
IF(AV)(A)
0
0 2 4 6 8 10 12 14 16 18 20
1.0
VFM (V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
IRM(A)
16
IF=IF(AV)
14 VR=200 V
Tj=125 °C
12
10
8
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Doc ID 023116 Rev 1
3/8







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)