2SK3060

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) Low Ciss: Ciss = 2400 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2SK3060-S TO-262 2SK3060-ZJ 2SK3060-Z TO-263 TO-220SMDNote Note This package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS(AC) Gate to Source Voltage (VDS = 0 V) VGSS(DC) Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT Total Power Dissipation (TA = 25°C) PT Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 60 ±20 +20, −10 ±70 ±210 70 1.5 150 –55 to +150 35 122.5 V V V A A W W °C °C A mJ (TO-220AB) (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for avail...