IGBT Module. 6MBI50UA-120 Datasheet

6MBI50UA-120 Module. Datasheet pdf. Equivalent

6MBI50UA-120 Datasheet
Recommendation 6MBI50UA-120 Datasheet
Part 6MBI50UA-120
Description IGBT Module
Feature 6MBI50UA-120; 6MBI50UA-120 IGBT Module U-Series 1200V / 50A 6 in one-package Features Applications · High spee.
Manufacture Fuji Electric
Datasheet
Download 6MBI50UA-120 Datasheet




Fuji Electric 6MBI50UA-120
6MBI50UA-120
IGBT Module U-Series 1200V / 50A 6 in one-package
Features
Applications
· High speed switching
· Inverter for Motor drive
· Uninterruptible power supply
· Voltage drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
VCES
VGES
IC
Continuous Tc=25°C
1200
±20
75
V
V
A
Tc=80°C
50
ICp
1ms Tc=25°C
150
Tc=80°C
100
-IC 50
Collector Power Dissipation
Junction temperature
-IC pulse
PC
Tj
1 device
100
275
+150
W
°C
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
-40 to +125
2500
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5 N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, IC=50A Tj=25°C
Tj=125°C
Min.
4.5
Typ.
6.5
2.00
2.25
Max.
1.0
200
8.5
2.35
mA
nA
V
V
VCE(sat)
Tj=25°C
1.75 2.10
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=50A
VGE=±15V
RG=22
VGE=0V
IF=50A
IF=50A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
– 2.00
–6
– 0.36
– 0.21
– 0.03
– 0.37
– 0.07
– 1.85
– 1.95
– 1.60
– 1.70
––
– 4.1
– 5000
– nF
1.20 µs
0.60
1.00
0.30
2.15 V
1.90
0.35 µs
m
B value
B
*4:Biggest internal terminal resistance among arm.
T=100°C
T=25/50°C
465
3305
495
3375
520
3450
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
Typ.
0.05
Max.
0.45
0.73
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.



Fuji Electric 6MBI50UA-120
6MBI50UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
125
VGE=20V 15V 12V
100
75
10V
50
25
0
0
8V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
125
T j=25°C T j=125°C
100
75
50
25
0
0 1 23 4
Collector-Emitter voltage : VCE [V]
5
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
10.0
Cies
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
125
VGE=20V 15V
12V
100
75
50 10V
25
0
0
8V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=100A
Ic=50A
Ic= 25A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25°C
VGE
1.0
Cres
0.1
0
Coes
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
100 200
Gate charge : Qg [ nC ]
300



Fuji Electric 6MBI50UA-120
6MBI50UA-120
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22, Tj= 25°C
IGBT Module
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22, Tj=125°C
1000
100
1000
ton
toff
tr
100
tf
toff
ton
tr
tf
10
0
25 50 75 100
10
0
25 50 75 100
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C
1000
ton
toff
tr
100
tf
10
10
100 1000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22
10
Eoff(125°C)
Eon(125°C)
8
6 Eoff(25°C)
Eon(25°C)
4
Err(125°C)
2
Err(25°C)
0
0 25 50 75 100
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
50
40
Eon
30
20
10
0
10
Eoff
Err
100 1000
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 22,Tj <= 125°C
125
100
75
50
25
0
0 400 800 1200







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